RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-3300C16-16GTZ 16GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs G Skill Intl F4-3300C16-16GTZ 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
G Skill Intl F4-3300C16-16GTZ 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
33
Around 27% lower latency
Faster reading speed, GB/s
16
10.6
Average value in the tests
Faster write speed, GB/s
12.5
8.4
Average value in the tests
Higher memory bandwidth, mbps
19200
17000
Around 1.13% higher bandwidth
Reasons to consider
G Skill Intl F4-3300C16-16GTZ 16GB
Report a bug
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-3300C16-16GTZ 16GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
33
Read speed, GB/s
16.0
10.6
Write speed, GB/s
12.5
8.4
Memory bandwidth, mbps
19200
17000
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2925
2503
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
G Skill Intl F4-3300C16-16GTZ 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3300C16-16GTZ 16GB
AMD AE34G1601U1 4GB
Kingmax Semiconductor GLLG42F-D8KCIA------ 8GB
Crucial Technology CT16G4SFD832A.M16FRS 16GB
Crucial Technology CT16G4SFD832A.C16FJ 16GB
Kingston KVT8FP-HYC 4GB
Micron Technology 18ASF1G72PDZ-2G1A1 8GB
Kingston KF552C40-16 16GB
Corsair CMH32GX4M2Z3200C16 16GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Crucial Technology BL8G32C16U4WL.M8FE1 8GB
A-DATA Technology AD4S3200316G22-BHYD 16GB
Chun Well Technology Holding Limited CL18-20-20 D4-3200
Kingston KHX1866C9D3/8GX 8GB
G Skill Intl F4-3000C15-8GVS 8GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Kingston KHX3300C16D4/4GX 4GB
Kingston 99U5471-020.A00LF 4GB
Corsair CMD64GX4M8A2400C14 8GB
Samsung M471B5273EB0-CK0 4GB
Crucial Technology CT4G4DFS824A.C8FF 4GB
Avant Technology F6451U64F9333G 4GB
Kingston XN205T-MIE 16GB
Kingston 2GB-DDR2 800Mhz 2GB
Gloway International (HK) STK4U2400D17042C 4GB
Kingston 99U5584-004.A00LF 4GB
Corsair CMW16GX4M2E3200C16 8GB
Report a bug
×
Bug description
Source link