RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-3333C16-8GTZB 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs G Skill Intl F4-3333C16-8GTZB 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
G Skill Intl F4-3333C16-8GTZB 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Higher memory bandwidth, mbps
19200
17000
Around 1.13% higher bandwidth
Reasons to consider
G Skill Intl F4-3333C16-8GTZB 8GB
Report a bug
Below the latency in the PassMark tests, ns
21
24
Around -14% lower latency
Faster reading speed, GB/s
18.7
16
Average value in the tests
Faster write speed, GB/s
14.1
12.5
Average value in the tests
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-3333C16-8GTZB 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
21
Read speed, GB/s
16.0
18.7
Write speed, GB/s
12.5
14.1
Memory bandwidth, mbps
19200
17000
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2925
3380
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
G Skill Intl F4-3333C16-8GTZB 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3333C16-8GTZB 8GB
Samsung M3 91T2953GZ3-CF7 1GB
G Skill Intl F4-4000C17-8GTZRB 8GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Corsair CMD16GX4M4A2800C16 4GB
A-DATA Technology DOVF1B163G2G 2GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N
Kingston 99U5474-010.A00LF 2GB
Crucial Technology CT16G4DFRA32A.M16FJ1 16GB
Nanya Technology NT512T64U88B0BY-3C 512MB
G Skill Intl F4-3000C15-8GVR 8GB
Kingston 9905403-170.A00LF 2GB
Kingston KHX2666C13D4/8GX 8GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Mushkin MR[A/B]4U360JNNM8G 8GB
A-DATA Technology VDQVE1B16 2GB
G Skill Intl F4-3200C16-32GTZN 32GB
G Skill Intl F5-5600J4040C16G 16GB
Apacer Technology 78.BAGNF.40C0B 4GB
Crucial Technology CT25664BA160B.C16F 2GB
G Skill Intl F4-2933C14-8GFX 8GB
Kingston 9905403-134.A00LF 2GB
Corsair CMW64GX4M4Z2933C16 16GB
Kingston ACR512X64D3S13C9G 4GB
G Skill Intl F4-3600C18-16GTZN 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-3600C17-8GTZSW 8GB
Report a bug
×
Bug description
Source link