RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Gloway International Co. Ltd. TYP4U3200E16082C 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Gloway International Co. Ltd. TYP4U3200E16082C 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Gloway International Co. Ltd. TYP4U3200E16082C 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
39
Around 38% lower latency
Faster write speed, GB/s
12.5
10.6
Average value in the tests
Reasons to consider
Gloway International Co. Ltd. TYP4U3200E16082C 8GB
Report a bug
Faster reading speed, GB/s
17.5
16
Average value in the tests
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Gloway International Co. Ltd. TYP4U3200E16082C 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
39
Read speed, GB/s
16.0
17.5
Write speed, GB/s
12.5
10.6
Memory bandwidth, mbps
19200
19200
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2925
2600
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Gloway International Co. Ltd. TYP4U3200E16082C 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston ACR512X64D3S13C9G 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
SK Hynix HMT42GR7AFR4C-RD 16GB
Kingston ACR32D4U2S1ME-8 8GB
Crucial Technology CT51264BD1339.M16F 4GB
A-DATA Technology AO2P24HCST2-BTVS 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Crucial Technology BLS8G4D30AESCK.M8FE 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Gloway International Co. Ltd. TYP4U3200E16082C 8GB
SK Hynix HMT325U6CFR8C-PB 2GB
G Skill Intl F4-3600C14-16GTRG 16GB
Corsair CMY16GX3M4A2133C8 4GB
Kingston KHX2800C12D3/4GX 4GB
Samsung M471B5673FH0-CF8 2GB
G Skill Intl F4-3000C16-8GTRG 8GB
Smart Modular SH564128FH8NZQNSCG 4GB
G Skill Intl F4-3200C18-16GRS 16GB
Kingston 9905403-061.A00LF 2GB
G Skill Intl F4-3000C15-4GRBB 4GB
Ramos Technology RMB4GB58BCA3-13HC 4GB
G Skill Intl F4-3733C17-8GTZA 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Crucial Technology CT8G4SFRA32A.M8FR 8GB
Samsung M378B5273DH0-CH9 4GB
Apacer Technology 78.C1GMM.AUC0B 8GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
V-Color Technology Inc. TC416G24D817 16GB
SK Hynix HYMP125U64CP8-S6 2GB
Crucial Technology CT16G4DFD8266.C16FN 16GB
Report a bug
×
Bug description
Source link