RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Gloway International (HK) STK4U2400D17041C 4GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Gloway International (HK) STK4U2400D17041C 4GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Gloway International (HK) STK4U2400D17041C 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
71
Around 66% lower latency
Faster reading speed, GB/s
16
15.8
Average value in the tests
Faster write speed, GB/s
12.5
7.9
Average value in the tests
Reasons to consider
Gloway International (HK) STK4U2400D17041C 4GB
Report a bug
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Gloway International (HK) STK4U2400D17041C 4GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
71
Read speed, GB/s
16.0
15.8
Write speed, GB/s
12.5
7.9
Memory bandwidth, mbps
19200
19200
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2925
1757
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Gloway International (HK) STK4U2400D17041C 4GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Gloway International (HK) STK4U2400D17041C 4GB
Ramaxel Technology RMT3010EC58E8F1333 2GB
Crucial Technology BLS4G4D26BFSB.8FE 4GB
SK Hynix HMA81GS6DJR8N-XN 8GB
Crucial Technology CT16G4SFD8266.M16FE 16GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
SK Hynix HMA82GR7AFR8N-UH 16GB
Kingston KHX318C10FR/8G 8GB
Crucial Technology BLS8G4D26BFSB.16FBR2 8GB
Samsung M378B5173BH0-CH9 4GB
G Skill Intl F4-3200C14-16GFX 16GB
AMD AE34G1601U1 4GB
V-GEN D4S4GL32A16TS 4GB
Corsair VSA2GSDS667C4 2GB
Corsair CMK16GX4M2Z2666C16 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
SK Hynix HMAA2GS6AJR8N-XN 16GB
Kingston KHX318C10FR/8G 8GB
Micron Technology 8ATF1G64HZ-2G1A1 8GB
Kingston 9965525-144.A00LF 8GB
Micron Technology 8ATF1G64AZ-2G6B1 8GB
Samsung M393B5170FH0-CK0 4GB
Corsair CMR64GX4M4A2666C16 16GB
Samsung M378A1G43DB0-CPB 8GB
Apacer Technology 78.D2GFH.4030B 16GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
Essencore Limited IM48GU88N26-FFFHMZ 8GB
Report a bug
×
Bug description
Source link