RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Kingston X2YH1K-MIE-NX 16GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Kingston X2YH1K-MIE-NX 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Kingston X2YH1K-MIE-NX 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
36
Around 33% lower latency
Faster write speed, GB/s
12.5
11.8
Average value in the tests
Reasons to consider
Kingston X2YH1K-MIE-NX 16GB
Report a bug
Faster reading speed, GB/s
18.7
16
Average value in the tests
Higher memory bandwidth, mbps
21300
19200
Around 1.11 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Kingston X2YH1K-MIE-NX 16GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
36
Read speed, GB/s
16.0
18.7
Write speed, GB/s
12.5
11.8
Memory bandwidth, mbps
19200
21300
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2925
3238
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Kingston X2YH1K-MIE-NX 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston X2YH1K-MIE-NX 16GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Crucial Technology CT8G4SFS632A 8GB
Elpida EBJ21UE8BDF0-DJ-F 2GB
Samsung SH5724G4UNC26P2-SC 32GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Panram International Corporation W4N2666PS-8G 8GB
Kingston 9965525-140.A00LF 8GB
Corsair CMK32GX4M4B3000C15 8GB
Corsair CMX8GX3M2A1600C11 4GB
Patriot Memory (PDP Systems) PSD48G26662 8GB
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F4-3000C16-8GTRG 8GB
Kingston 9905469-143.A00LF 4GB
Crucial Technology BLS8G4D26BFSCK.8FD 8GB
Samsung M471A1K43BB1-CRC 8GB
Samsung M471A1G43DB0-CPB 8GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Crucial Technology BL16G36C16U4RL.M16FE 16GB
TwinMOS 8DHE3MN8-HATP 2GB
Crucial Technology CT8G4SFRA266.M8FRS 8GB
G Skill Intl F3-2133C9-4GAB 4GB
Crucial Technology CT8G4DFS832A.C8FE 8GB
Kingston 99P5471-002.A00LF 2GB
Corsair CMK8GX4M2B4200C19 4GB
Samsung M471B5173DB0-YK0 4GB
G Skill Intl F4-3200C14-16GVK 16GB
Report a bug
×
Bug description
Source link