RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Patriot Memory (PDP Systems) PSD416G320081 16GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Patriot Memory (PDP Systems) PSD416G320081 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Patriot Memory (PDP Systems) PSD416G320081 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
32
Around 25% lower latency
Reasons to consider
Patriot Memory (PDP Systems) PSD416G320081 16GB
Report a bug
Faster reading speed, GB/s
18.9
16
Average value in the tests
Faster write speed, GB/s
15.2
12.5
Average value in the tests
Higher memory bandwidth, mbps
25600
19200
Around 1.33 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Patriot Memory (PDP Systems) PSD416G320081 16GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
32
Read speed, GB/s
16.0
18.9
Write speed, GB/s
12.5
15.2
Memory bandwidth, mbps
19200
25600
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
2925
3621
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Patriot Memory (PDP Systems) PSD416G320081 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Crucial Technology CT51264BD1339.M16F 4GB
V-GEN D4S4GL32A16TS 4GB
SK Hynix HMT451S6BFR8A-PB 4GB
Samsung M378A1G43TB1-CTD 8GB
Samsung M393B1G70BH0-CK0 8GB
Crucial Technology BL32G32C16U4B.M16FB1 32GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Kingmax Semiconductor GLLG42F-D8KCIA------ 8GB
Crucial Technology CT51264AC800.C16FC 4GB
Chun Well Technology Holding Limited D4U1636144B 16GB
Samsung 1600 CL10 Series 8GB
Team Group Inc. Team-Elite-2133 4GB
AMD R5S38G1601U2S 8GB
V-Color Technology Inc. TA48G36S818BNK 8GB
Kingston 9965525-018.A00LF 4GB
Corsair CMT32GX4M2E3200C16 16GB
TwinMOS 8DPT5MK8-TATP 2GB
G Skill Intl F4-3200C14-16GTZKY 16GB
Kingston ACR512X64D3S13C9G 4GB
Kingmax Semiconductor GLLF62F-C6---------- 4GB
A-DATA Technology ADOVE1A0834E 1GB
Crucial Technology CT8G4SFD824A.C16FBD2 8GB
G Skill Intl F3-14900CL9-4GBSR 4GB
Crucial Technology CT8G4DFRA32A.M4FF 8GB
Samsung M471B5173QH0-YK0 4GB
Crucial Technology CT8G4SFRA266.M8FJ 8GB
Crucial Technology CT51264BA1339.C16F 4GB
Kingston KDK8NX-MIE 16GB
Report a bug
×
Bug description
Source link