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Kingston 39P5429-006.AO01 2GB
G Skill Intl F4-4133C17-8GTZR 8GB

Kingston 39P5429-006.AO01 2GB vs G Skill Intl F4-4133C17-8GTZR 8GB

Overall score
star star star star star
Kingston 39P5429-006.AO01 2GB

Kingston 39P5429-006.AO01 2GB

Overall score
star star star star star
G Skill Intl F4-4133C17-8GTZR 8GB

G Skill Intl F4-4133C17-8GTZR 8GB

Differences Specifications Comments

Differences

Kingston 39P5429-006.AO01 2GB Reasons to consider
Kingston 39P5429-006.AO01 2GB
Report a bug
  • Faster reading speed, GB/s
    6 left arrow 19.5
    Average value in the tests
G Skill Intl F4-4133C17-8GTZR 8GB Reasons to consider
G Skill Intl F4-4133C17-8GTZR 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    25 left arrow 44
    Around -76% lower latency
  • Faster write speed, GB/s
    16.2 left arrow 1,892.9
    Average value in the tests
  • Higher memory bandwidth, mbps
    17000 left arrow 6400
    Around 2.66 higher bandwidth

Specifications

Complete list of technical specifications
Kingston 39P5429-006.AO01 2GB
G Skill Intl F4-4133C17-8GTZR 8GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    44 left arrow 25
  • Read speed, GB/s
    6,181.5 left arrow 19.5
  • Write speed, GB/s
    1,892.9 left arrow 16.2
  • Memory bandwidth, mbps
    6400 left arrow 17000
Other
  • Description
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • Timings / Clock speed
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    851 left arrow 3890

Kingston 39P5429-006.AO01 2GB RAM comparisons

Hynix Semiconductor (Hyundai Electronics) HYMP125U64CP8-S6 2GB
G Skill Intl F4-3200C16-32GTRG 32GB

G Skill Intl F4-4133C17-8GTZR 8GB RAM comparisons

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A-DATA Technology VDQVE1B16 2GB
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