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Kingston KVR533D2N4 512MB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

Kingston KVR533D2N4 512MB vs Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

Overall score
star star star star star
Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

Overall score
star star star star star
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

Differences Specifications Comments

Differences

Kingston KVR533D2N4 512MB Reasons to consider
Kingston KVR533D2N4 512MB
Report a bug
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB Reasons to consider
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    71 left arrow 75
    Around -6% lower latency
  • Faster reading speed, GB/s
    15.6 left arrow 1
    Average value in the tests
  • Faster write speed, GB/s
    6.4 left arrow 1,672.1
    Average value in the tests
  • Higher memory bandwidth, mbps
    21300 left arrow 4200
    Around 5.07 higher bandwidth

Specifications

Complete list of technical specifications
Kingston KVR533D2N4 512MB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    75 left arrow 71
  • Read speed, GB/s
    1,943.5 left arrow 15.6
  • Write speed, GB/s
    1,672.1 left arrow 6.4
  • Memory bandwidth, mbps
    4200 left arrow 21300
Other
  • Description
    PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • Timings / Clock speed
    4-4-4-12 / 533 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • Ranking PassMark (The more the better)
    301 left arrow 1650

Kingston KVR533D2N4 512MB RAM comparisons

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Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB RAM comparisons

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