RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology M2N1G64TUH8D5F-AC 1GB
SK Hynix V-GeN D4H4GL26A8TL 4GB
Compare
Nanya Technology M2N1G64TUH8D5F-AC 1GB vs SK Hynix V-GeN D4H4GL26A8TL 4GB
Overall score
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Overall score
SK Hynix V-GeN D4H4GL26A8TL 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Report a bug
Faster reading speed, GB/s
2
16.2
Average value in the tests
Reasons to consider
SK Hynix V-GeN D4H4GL26A8TL 4GB
Report a bug
Below the latency in the PassMark tests, ns
68
92
Around -35% lower latency
Faster write speed, GB/s
8.1
1,266.1
Average value in the tests
Higher memory bandwidth, mbps
19200
6400
Around 3 higher bandwidth
Specifications
Complete list of technical specifications
Nanya Technology M2N1G64TUH8D5F-AC 1GB
SK Hynix V-GeN D4H4GL26A8TL 4GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
92
68
Read speed, GB/s
2,105.4
16.2
Write speed, GB/s
1,266.1
8.1
Memory bandwidth, mbps
6400
19200
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
339
1812
Nanya Technology M2N1G64TUH8D5F-AC 1GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) HYMP564S64CP6-Y5 512MB
Kingston 9905744-067.A00G 32GB
SK Hynix V-GeN D4H4GL26A8TL 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Nanya Technology M2N1G64TUH8D5F-AC 1GB
SK Hynix V-GeN D4H4GL26A8TL 4GB
Samsung M378A1K43EB2-CWE 8GB
Kingston 9905625-142.A00G 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-2666C15-4GVK 4GB
Kingston KHX2133C11D3/4GX 4GB
Samsung M393A5143DB0-CRC 4GB
Elpida EBE10UE8AFSA-8G-F 1GB
SK Hynix HYMP125S64CP8-S6 2GB
Corsair CM3X8GA2400C11Y2R 8GB
Crucial Technology CT16G4SFRA32A.M16FR 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Kingston LV36D4U1S8HD-8XR 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Crucial Technology CT32G4DFD832A.M16FB 32GB
TwinMOS 8DPT5MK8-TATP 2GB
Crucial Technology BLS8G4D240FSBK.8FD 8GB
Elpida EBJ81UG8BBU0-GN-F 8GB
A-DATA Technology AM2P24HC4R1-BUPS 4GB
Hexon Technology Pte Ltd HEXON 1GB
G Skill Intl F4-2933C16-8GTZRX 8GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Hynix Semiconductor (Hyundai Electronics) GKE160UD10240
Hexon Technology Pte Ltd HEXON 1GB
Crucial Technology CT4G4DFS8266.C8FF 4GB
Kingston HP32D4S2S1ME-4 4GB
G Skill Intl F4-3000C15-8GVRB 8GB
Report a bug
×
Bug description
Source link