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Nanya Technology M2X4G64CB8HG9N-DG 4GB
Samsung M391A1K43BB2-CTD 8GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB vs Samsung M391A1K43BB2-CTD 8GB

Overall score
star star star star star
Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Overall score
star star star star star
Samsung M391A1K43BB2-CTD 8GB

Samsung M391A1K43BB2-CTD 8GB

Differences Specifications Comments

Differences

Nanya Technology M2X4G64CB8HG9N-DG 4GB Reasons to consider
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    36 left arrow 64
    Around 44% lower latency
  • Faster write speed, GB/s
    9.5 left arrow 9.3
    Average value in the tests
Samsung M391A1K43BB2-CTD 8GB Reasons to consider
Samsung M391A1K43BB2-CTD 8GB
Report a bug
  • Faster reading speed, GB/s
    17.5 left arrow 14.9
    Average value in the tests
  • Higher memory bandwidth, mbps
    21300 left arrow 12800
    Around 1.66 higher bandwidth

Specifications

Complete list of technical specifications
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Samsung M391A1K43BB2-CTD 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    36 left arrow 64
  • Read speed, GB/s
    14.9 left arrow 17.5
  • Write speed, GB/s
    9.5 left arrow 9.3
  • Memory bandwidth, mbps
    12800 left arrow 21300
Other
  • Description
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • Ranking PassMark (The more the better)
    2292 left arrow 2205

Nanya Technology M2X4G64CB8HG9N-DG 4GB RAM comparisons

Kingston 9905402-592.A00LF 4GB
SK Hynix Kingston 4GB

Samsung M391A1K43BB2-CTD 8GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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