Nanya Technology M2X4G64CB8HG9N-DG 4GB vs Samsung M391A1K43BB2-CTD 8GB

总分

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

总分

Samsung M391A1K43BB2-CTD 8GB

Samsung M391A1K43BB2-CTD 8GB

差异规格评论

差异

Nanya Technology M2X4G64CB8HG9N-DG 4GB

需要考虑的原因
Nanya Technology M2X4G64CB8HG9N-DG 4GB

报告一个错误

低于PassMark测试中的延时，ns

36 64

左右 44% 更低的延时
更快的写入速度，GB/s

9.5 9.3

测试中的平均数值

Samsung M391A1K43BB2-CTD 8GB

需要考虑的原因
Samsung M391A1K43BB2-CTD 8GB

报告一个错误

更快的读取速度，GB/s

17.5 14.9

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Samsung M391A1K43BB2-CTD 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

36 64
读取速度，GB/s

14.9 17.5
写入速度，GB/s

9.5 9.3
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2292 2205

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

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Corsair VSA2GSDS667C4 2GB

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Mushkin MR[A/B]4U320LLLM8G 8GB

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Ramaxel Technology RMSA3320MJ78HAF-3200 8GB

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Crucial Technology BL8G32C16U4WL.8FE 8GB

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Kingston 99U5713-002.A00G 4GB

Kingston 99U5713-002.A00G 4GB