RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Micron Technology 16ATF2G64AZ-2G6E1 16GB
Compare
Nanya Technology NT4GC64B8HG0NS-CG 4GB vs Micron Technology 16ATF2G64AZ-2G6E1 16GB
Overall score
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Overall score
Micron Technology 16ATF2G64AZ-2G6E1 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Report a bug
Reasons to consider
Micron Technology 16ATF2G64AZ-2G6E1 16GB
Report a bug
Below the latency in the PassMark tests, ns
38
42
Around -11% lower latency
Faster reading speed, GB/s
15
9.7
Average value in the tests
Faster write speed, GB/s
12.5
6.0
Average value in the tests
Higher memory bandwidth, mbps
21300
10600
Around 2.01 higher bandwidth
Specifications
Complete list of technical specifications
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Micron Technology 16ATF2G64AZ-2G6E1 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
42
38
Read speed, GB/s
9.7
15.0
Write speed, GB/s
6.0
12.5
Memory bandwidth, mbps
10600
21300
Other
Description
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Timings / Clock speed
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
1396
3005
Nanya Technology NT4GC64B8HG0NS-CG 4GB RAM comparisons
Corsair CMY8GX3M2A2666C10 4GB
Corsair CMSO4GX3M1A1333C9 4GB
Micron Technology 16ATF2G64AZ-2G6E1 16GB RAM comparisons
PNY Electronics PNY 2GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
A-DATA Technology DDR3 1600 4GB
G Skill Intl F4-3600C17-16GTZKK 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Micron Technology 18ADF2G72AZ-2G3B1 16GB
Kingston 9905584-016.A00LF 4GB
Kingston XRGM6C-MIE 16GB
Samsung M3 78T2863EHS-CF7 1GB
Apacer Technology 78.D2GFH.4030B 16GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Micron Technology 16ATF2G64AZ-2G6E1 16GB
Kingston KHX2133C11D3/4GX 4GB
Good Wealth Technology Ltd. KETECH 8GB
Kingston KHX3200C18D4/8G 8GB
G Skill Intl F4-3200C16-16GTZSK 16GB
Ramos Technology RMB4GB58BCA3-13HC 4GB
Kingston MSI24D4S7S8MB-8 8GB
Elpida EBJ41UF8BDW0-GN-F 4GB
Patriot Memory (PDP Systems) PSD416G32002 16GB
Samsung M3 78T2953EZ3-CF7 1GB
Crucial Technology CT8G4DFRA266.C8FP 8GB
Samsung M378B5673EH1-CF8 2GB
Crucial Technology CT16G4DFD8213.M16FB 16GB
Crucial Technology CT25664AA800.M16FM 2GB
Crucial Technology CT4G4DFS8266.M8FF 4GB
Asgard VMA45UG-MEC1U2AW1 8GB
Mushkin 99[2/7/4]191[F/T] 4GB
Team Group Inc. ZEUS-2133 8GB
Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N
Report a bug
×
Bug description
Source link