RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology NT512T64U88B0BY-3C 512MB
Apacer Technology 78.CAGP7.C7C0B 8GB
Compare
Nanya Technology NT512T64U88B0BY-3C 512MB vs Apacer Technology 78.CAGP7.C7C0B 8GB
Overall score
Nanya Technology NT512T64U88B0BY-3C 512MB
Overall score
Apacer Technology 78.CAGP7.C7C0B 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Nanya Technology NT512T64U88B0BY-3C 512MB
Report a bug
Below the latency in the PassMark tests, ns
71
75
Around 5% lower latency
Faster reading speed, GB/s
2
13.6
Average value in the tests
Reasons to consider
Apacer Technology 78.CAGP7.C7C0B 8GB
Report a bug
Faster write speed, GB/s
6.6
1,322.6
Average value in the tests
Higher memory bandwidth, mbps
19200
5300
Around 3.62 higher bandwidth
Specifications
Complete list of technical specifications
Nanya Technology NT512T64U88B0BY-3C 512MB
Apacer Technology 78.CAGP7.C7C0B 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
71
75
Read speed, GB/s
2,831.6
13.6
Write speed, GB/s
1,322.6
6.6
Memory bandwidth, mbps
5300
19200
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
399
1578
Nanya Technology NT512T64U88B0BY-3C 512MB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) HYMP564U64EP8-S5 512MB
G Skill Intl F4-3200C16-16GTZSK 16GB
Apacer Technology 78.CAGP7.C7C0B 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMD8GX3M2A2933C12 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung DDR3 8GB 1600MHz 8GB
G Skill Intl F4-3200C16-8GTZKW 8GB
takeMS International AG TMS2GB264D082-805G 2GB
G Skill Intl F4-3600C17-16GTZKW 16GB
Nanya Technology NT512T64U88B0BY-3C 512MB
Apacer Technology 78.CAGP7.C7C0B 8GB
Kingston ACR512X64D3S13C9G 4GB
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB
Kingston KHX1600C9D3/4GX 4GB
Micron Technology 16A6A2G64HZ-2-2E1 16GB
Samsung M471B1G73EB0-YK0 8GB
G Skill Intl F4-4400C19-8GTZKK 8GB
Kingston 2GB-DDR2 800Mhz 2GB
Hewlett-Packard 7EH74AA#ABC 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3333C16-8GTZ 8GB
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
Crucial Technology BL32G32C16U4WL.M16FB 32GB
Samsung M395T2863QZ4-CF76 1GB
G Skill Intl F4-2400C16-8GIS 8GB
AMD R5316G1609U2K 8GB
Crucial Technology CT8G4SFS8266.C8FJ 8GB
AMD AE34G1601U1 4GB
G Skill Intl F4-2800C17-8GVR 8GB
SK Hynix HMT351S6CFR8C-PB 4GB
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-3200C16-8GTRS 8GB
Report a bug
×
Bug description
Source link