RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Patriot Memory (PDP Systems) PSD22G8002 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB
Compare
Patriot Memory (PDP Systems) PSD22G8002 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB
Overall score
Patriot Memory (PDP Systems) PSD22G8002 2GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Patriot Memory (PDP Systems) PSD22G8002 2GB
Report a bug
Faster reading speed, GB/s
4
12.2
Average value in the tests
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB
Report a bug
Below the latency in the PassMark tests, ns
29
60
Around -107% lower latency
Faster write speed, GB/s
9.6
2,109.3
Average value in the tests
Higher memory bandwidth, mbps
17000
6400
Around 2.66 higher bandwidth
Specifications
Complete list of technical specifications
Patriot Memory (PDP Systems) PSD22G8002 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
60
29
Read speed, GB/s
4,162.7
12.2
Write speed, GB/s
2,109.3
9.6
Memory bandwidth, mbps
6400
17000
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
Timings / Clock speed
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
784
2443
Patriot Memory (PDP Systems) PSD22G8002 2GB RAM comparisons
Apacer Technology 75.A73AA.G03 2GB
Patriot Memory (PDP Systems) PSD22G80026 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB RAM comparisons
Samsung M393B1G70BH0-CK0 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston ACR256X64D3S1333C9 2GB
Kingston HX424C15PB/4 4GB
Samsung M393B1K70CH0-CH9 8GB
A-DATA Technology AM1P26KC8T1-BAAS 8GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Wilk Elektronik S.A. IR2400D464L15S/8G 8GB
A-DATA Technology VDQVE1B16 2GB
Gloway International Co. Ltd. TYP4U3200E16082C 8GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Kingston 9905700-012.A00G 8GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
G Skill Intl F4-4133C19-4GTZ 4GB
Kingston 9965525-018.A00LF 4GB
G Skill Intl F4-3733C17-8GTZKW 8GB
Elpida EBJ10UE8BAFA-AE-E 1GB
G Skill Intl F4-2666C15-8GRKB 8GB
Samsung M378B5673FH0-CH9 2GB
G Skill Intl F4-4000C17-16GTRGB 16GB
Samsung M3 78T3354BZ0-CCC 256MB
A-DATA Technology AM1P26KCST2-BABS 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
G Skill Intl F4-2933C16-16GFX 16GB
ASint Technology SSA302G08-EGN1C 4GB
EVGA 8GX-D4-3200-MR 8GB
Kingston 9965525-155.A00LF 8GB
Samsung M378A2G43MX3-CTD 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMK16GX4M2K4400C19 8GB
Report a bug
×
Bug description
Source link