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PNY Electronics PNY 2GB
Micron Technology CT8G4DFD8213.16FA11 8GB

PNY Electronics PNY 2GB vs Micron Technology CT8G4DFD8213.16FA11 8GB

Overall score
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PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Overall score
star star star star star
Micron Technology CT8G4DFD8213.16FA11 8GB

Micron Technology CT8G4DFD8213.16FA11 8GB

Differences Specifications Comments

Differences

PNY Electronics PNY 2GB Reasons to consider
PNY Electronics PNY 2GB
Report a bug
  • Below the latency in the PassMark tests, ns
    27 left arrow 28
    Around 4% lower latency
  • Faster reading speed, GB/s
    13.8 left arrow 12
    Average value in the tests
Micron Technology CT8G4DFD8213.16FA11 8GB Reasons to consider
Micron Technology CT8G4DFD8213.16FA11 8GB
Report a bug
  • Faster write speed, GB/s
    9.1 left arrow 8.4
    Average value in the tests
  • Higher memory bandwidth, mbps
    17000 left arrow 10600
    Around 1.6 higher bandwidth

Specifications

Complete list of technical specifications
PNY Electronics PNY 2GB
Micron Technology CT8G4DFD8213.16FA11 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    27 left arrow 28
  • Read speed, GB/s
    13.8 left arrow 12.0
  • Write speed, GB/s
    8.4 left arrow 9.1
  • Memory bandwidth, mbps
    10600 left arrow 17000
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 6 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    2274 left arrow 2347

PNY Electronics PNY 2GB RAM comparisons

Kingston 9965426-130.A00LF 4GB
Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB

Micron Technology CT8G4DFD8213.16FA11 8GB RAM comparisons

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Kingston ACR512X64D3S13C9G 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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