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PNY Electronics PNY 2GB
OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB
Compare
PNY Electronics PNY 2GB vs OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB
Overall score
PNY Electronics PNY 2GB
Overall score
OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
PNY Electronics PNY 2GB
Report a bug
Reasons to consider
OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB
Report a bug
Faster reading speed, GB/s
17.4
13.8
Average value in the tests
Faster write speed, GB/s
14.5
8.4
Average value in the tests
Higher memory bandwidth, mbps
25600
10600
Around 2.42 higher bandwidth
Specifications
Complete list of technical specifications
PNY Electronics PNY 2GB
OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
27
27
Read speed, GB/s
13.8
17.4
Write speed, GB/s
8.4
14.5
Memory bandwidth, mbps
10600
25600
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 8 9
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
Timings / Clock speed
7-7-7-20 / 1333 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
2274
3692
PNY Electronics PNY 2GB RAM comparisons
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OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB RAM comparisons
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Samsung M395T2863QZ4-CF76 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
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Absolute Latency
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RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
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Absolute Latency
0 ns
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