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Ramaxel Technology RMT3170EB68F9W1600 4GB
Micron Technology AFSD416ES1P 16GB

Ramaxel Technology RMT3170EB68F9W1600 4GB vs Micron Technology AFSD416ES1P 16GB

Overall score
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Ramaxel Technology RMT3170EB68F9W1600 4GB

Ramaxel Technology RMT3170EB68F9W1600 4GB

Overall score
star star star star star
Micron Technology AFSD416ES1P 16GB

Micron Technology AFSD416ES1P 16GB

Differences Specifications Comments

Differences

Ramaxel Technology RMT3170EB68F9W1600 4GB Reasons to consider
Ramaxel Technology RMT3170EB68F9W1600 4GB
Report a bug
Micron Technology AFSD416ES1P 16GB Reasons to consider
Micron Technology AFSD416ES1P 16GB
Report a bug
  • Below the latency in the PassMark tests, ns
    25 left arrow 43
    Around -72% lower latency
  • Faster reading speed, GB/s
    14.5 left arrow 11.4
    Average value in the tests
  • Faster write speed, GB/s
    10.7 left arrow 7.7
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 12800
    Around 1.5 higher bandwidth

Specifications

Complete list of technical specifications
Ramaxel Technology RMT3170EB68F9W1600 4GB
Micron Technology AFSD416ES1P 16GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    43 left arrow 25
  • Read speed, GB/s
    11.4 left arrow 14.5
  • Write speed, GB/s
    7.7 left arrow 10.7
  • Memory bandwidth, mbps
    12800 left arrow 19200
Other
  • Description
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    1823 left arrow 2620

Ramaxel Technology RMT3170EB68F9W1600 4GB RAM comparisons

Hynix Semiconductor (Hyundai Electronics) HMT41GS6AFR8A-PB 8GB
Kingston HP26D4U6D8ME-16X 16GB

Micron Technology AFSD416ES1P 16GB RAM comparisons

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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