RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung 1600 CL10 Series 8GB
G Skill Intl F4-2666C15-8GRKB 8GB
Compare
Samsung 1600 CL10 Series 8GB vs G Skill Intl F4-2666C15-8GRKB 8GB
Overall score
Samsung 1600 CL10 Series 8GB
Overall score
G Skill Intl F4-2666C15-8GRKB 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung 1600 CL10 Series 8GB
Report a bug
Below the latency in the PassMark tests, ns
25
27
Around 7% lower latency
Faster reading speed, GB/s
16.1
13.3
Average value in the tests
Reasons to consider
G Skill Intl F4-2666C15-8GRKB 8GB
Report a bug
Faster write speed, GB/s
10.9
10.1
Average value in the tests
Higher memory bandwidth, mbps
17000
12800
Around 1.33 higher bandwidth
Specifications
Complete list of technical specifications
Samsung 1600 CL10 Series 8GB
G Skill Intl F4-2666C15-8GRKB 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
25
27
Read speed, GB/s
16.1
13.3
Write speed, GB/s
10.1
10.9
Memory bandwidth, mbps
12800
17000
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
Timings / Clock speed
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2764
2823
Samsung 1600 CL10 Series 8GB RAM comparisons
G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB
G Skill Intl F4-2666C15-8GRKB 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Gloway International Co. Ltd. TYA4U2666D19161C 16GB
Team Group Inc. Vulcan-1600 4GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB
Micron Technology 18HTF12872AY-800F1 1GB
Kingston 99U5713-003.A00G 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
Patriot Memory (PDP Systems) 3000 C15 Series 8GB
Samsung M378B5673FH0-CH9 2GB
Apacer Technology 78.CAGNK.4040B 8GB
Nanya Technology NT512T64U88B0BY-3C 512MB
Crucial Technology CT8G4SFRA266.M8FJ 8GB
Kingston 9905403-444.A00LF 4GB
Crucial Technology BLS4G4D26BFSE.8FB 4GB
Kingston ACR256X64D3S1333C9 2GB
Crucial Technology CT16G4DFRA266.C16FP 16GB
Samsung M3 78T2953EZ3-CF7 1GB
Apacer Technology 78.CAGP7.4020B 8GB
Nanya Technology M2Y51264TU88A2B-3C 512MB
G Skill Intl F4-3000C16-16GTZR 16GB
Kingston ACR256X64D3S1333C9 2GB
Crucial Technology BL16G36C16U4W.M8FB1 16GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Crucial Technology CT8G4SFD8213.C16FDD2 8GB
Kingston 9965525-140.A00LF 8GB
Crucial Technology CB8GS2400.C8JT 8GB
Samsung M471B1G73QH0-YK0 8GB
Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8G
Report a bug
×
Bug description
Source link