RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung 1600 CL10 Series 8GB
G Skill Intl F4-3200C16-8GVS 8GB
Compare
Samsung 1600 CL10 Series 8GB vs G Skill Intl F4-3200C16-8GVS 8GB
Overall score
Samsung 1600 CL10 Series 8GB
Overall score
G Skill Intl F4-3200C16-8GVS 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung 1600 CL10 Series 8GB
Report a bug
Below the latency in the PassMark tests, ns
25
28
Around 11% lower latency
Reasons to consider
G Skill Intl F4-3200C16-8GVS 8GB
Report a bug
Faster reading speed, GB/s
17.4
16.1
Average value in the tests
Faster write speed, GB/s
12.6
10.1
Average value in the tests
Higher memory bandwidth, mbps
17000
12800
Around 1.33 higher bandwidth
Specifications
Complete list of technical specifications
Samsung 1600 CL10 Series 8GB
G Skill Intl F4-3200C16-8GVS 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
25
28
Read speed, GB/s
16.1
17.4
Write speed, GB/s
10.1
12.6
Memory bandwidth, mbps
12800
17000
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
Timings / Clock speed
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2764
3085
Samsung 1600 CL10 Series 8GB RAM comparisons
G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB
G Skill Intl F4-3200C16-8GVS 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
A-DATA Technology DQVE1908 512MB
SanMax Technologies Inc. SMD4-U8G48MB-24RX 8GB
takeMS International AG TMS2GB264D082-805G 2GB
G Skill Intl F4-3333C16-16GTZSK 16GB
Samsung 1600 CL10 Series 8GB
G Skill Intl F4-3200C16-8GVS 8GB
G Skill Intl F3-2800C12-8GTXDG 8GB
G Skill Intl F4-4000C16-8GTZR 8GB
SK Hynix HMT325U6CFR8C-PB 2GB
Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Gloway International Co. Ltd. TYA4U2666D19321C 32GB
Samsung M378B5773CH0-CH9 2GB
A-DATA Technology AM2P24HC4R1-BUPS 4GB
Kingston 99U5403-036.A00G 4GB
Panram International Corporation PUD42400C154GNJW 4GB
Kingston KHX2400C11D3/4GX 4GB
Kingston RB26D4U9D8MEH-16 16GB
Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology CT16G4SFD8266.M16FE 16GB
A-DATA Technology AD73I1B1672EG 2GB
Kingston ACR26D4U9S1KA-4 4GB
Corsair CML8GX3M1A1600C10 8GB
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16
Nanya Technology M2Y1G64TU8HB0B-25C 1GB
Samsung M391A1G43EB1-CRC 8GB
SK Hynix HMT325U6CFR8C-PB 2GB
Mushkin 99[2/7/4]200[F/T] 8GB
Report a bug
×
Bug description
Source link