Samsung 1600 CL10 Series 8GB vs Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB

Overall score

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Overall score

Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB

Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB

Differences Specifications Comments

Differences

Samsung 1600 CL10 Series 8GB

Reasons to consider
Samsung 1600 CL10 Series 8GB

Below the latency in the PassMark tests, ns

25 31

Around 19% lower latency
Faster reading speed, GB/s

16.1 12.5

Average value in the tests
Faster write speed, GB/s

10.1 9.4

Average value in the tests

Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB

Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB

Higher memory bandwidth, mbps

19200 12800

Around 1.5 higher bandwidth

Specifications

Complete list of technical specifications

Samsung 1600 CL10 Series 8GB

Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB

Main characteristics

Memory type

DDR3 DDR4
Latency in PassMark, ns

25 31
Read speed, GB/s

16.1 12.5
Write speed, GB/s

10.1 9.4
Memory bandwidth, mbps

12800 19200

Other

Description

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)

2764 2361

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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