RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung 1600 CL10 Series 8GB
Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB
Compare
Samsung 1600 CL10 Series 8GB vs Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB
Overall score
Samsung 1600 CL10 Series 8GB
Overall score
Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung 1600 CL10 Series 8GB
Report a bug
Below the latency in the PassMark tests, ns
25
72
Around 65% lower latency
Faster reading speed, GB/s
16.1
15.3
Average value in the tests
Faster write speed, GB/s
10.1
8.0
Average value in the tests
Reasons to consider
Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB
Report a bug
Higher memory bandwidth, mbps
19200
12800
Around 1.5 higher bandwidth
Specifications
Complete list of technical specifications
Samsung 1600 CL10 Series 8GB
Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
25
72
Read speed, GB/s
16.1
15.3
Write speed, GB/s
10.1
8.0
Memory bandwidth, mbps
12800
19200
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
Timings / Clock speed
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2764
1593
Samsung 1600 CL10 Series 8GB RAM comparisons
G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB
Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB RAM comparisons
Apacer Technology AQD-D4U8GN24-SE 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Lexar Co Limited LD4AU016G-H3200GST 16GB
Patriot Memory (PDP Systems) 2800 C16 Series 8GB
Samsung 1600 CL10 Series 8GB
Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB
SK Hynix HYMP112U64CP8-Y5 1GB
Corsair CMW32GX4M2D3600C18 16GB
Samsung M393B1K70CH0-CH9 8GB
G Skill Intl F4-3000C15-4GRBB 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N
Kingmax Semiconductor KLDE88F-B8KB5 2GB
Crucial Technology BL16G36C16U4WL.M16FE 16GB
Essencore Limited KD48GU88C-26N1600 8GB
DSL Memory D4SS12082SH21A-A 8GB
Kingston 9905471-006.A00LF 4GB
AMD R744G2133U1S 4GB
Kingston 9905471-006.A01LF 4GB
G Skill Intl F4-3466C16-4GVK 4GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Smart Modular SF4641G8CK8IEGKSBG 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393A2K40BB1-CRC 16GB
AMD AE34G1601U1 4GB
Kingston MSI24D4U7S8MB-8 8GB
Samsung M393B1K70QB0-CK0 8GB
G Skill Intl F4-3200C15-8GTZ 8GB
Samsung M393B1G70BH0-YK0 8GB
G Skill Intl F4-3600C16-16GTZRC 16GB
Report a bug
×
Bug description
Source link