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Samsung DDR3 8GB 1600MHz 8GB
Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB

Samsung DDR3 8GB 1600MHz 8GB vs Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB

Overall score
star star star star star
Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Overall score
star star star star star
Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB

Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB

Differences Specifications Comments

Differences

Samsung DDR3 8GB 1600MHz 8GB Reasons to consider
Samsung DDR3 8GB 1600MHz 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    43 left arrow 74
    Around 42% lower latency
  • Faster reading speed, GB/s
    14.9 left arrow 13.6
    Average value in the tests
  • Faster write speed, GB/s
    9.6 left arrow 7.7
    Average value in the tests
Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB Reasons to consider
Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB
Report a bug
  • Higher memory bandwidth, mbps
    21300 left arrow 12800
    Around 1.66 higher bandwidth

Specifications

Complete list of technical specifications
Samsung DDR3 8GB 1600MHz 8GB
Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    43 left arrow 74
  • Read speed, GB/s
    14.9 left arrow 13.6
  • Write speed, GB/s
    9.6 left arrow 7.7
  • Memory bandwidth, mbps
    12800 left arrow 21300
Other
  • Description
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • Ranking PassMark (The more the better)
    2506 left arrow 1616

Samsung DDR3 8GB 1600MHz 8GB RAM comparisons

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Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB RAM comparisons

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RAM Latency Calculator
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