RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 78T2863QZS-CF7 1GB
G Skill Intl F4-2400C17-8GIS 8GB
Compare
Samsung M3 78T2863QZS-CF7 1GB vs G Skill Intl F4-2400C17-8GIS 8GB
Overall score
Samsung M3 78T2863QZS-CF7 1GB
Overall score
G Skill Intl F4-2400C17-8GIS 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 78T2863QZS-CF7 1GB
Report a bug
Faster reading speed, GB/s
4
15.8
Average value in the tests
Reasons to consider
G Skill Intl F4-2400C17-8GIS 8GB
Report a bug
Below the latency in the PassMark tests, ns
31
69
Around -123% lower latency
Faster write speed, GB/s
11.3
1,857.7
Average value in the tests
Higher memory bandwidth, mbps
19200
6400
Around 3 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 78T2863QZS-CF7 1GB
G Skill Intl F4-2400C17-8GIS 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
69
31
Read speed, GB/s
4,217.2
15.8
Write speed, GB/s
1,857.7
11.3
Memory bandwidth, mbps
6400
19200
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-19200, 1.2V, CAS Supported: 9 11 13 15 17
Timings / Clock speed
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
668
2865
Samsung M3 78T2863QZS-CF7 1GB RAM comparisons
Samsung M3 78T2953EZ3-CE7 1GB
Kingston 99U5712-002.A00G 16GB
G Skill Intl F4-2400C17-8GIS 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
SK Hynix HMT151R7TFR4C-H9 4GB
Crucial Technology CT4G4DFS824A.M8FE 4GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Crucial Technology CT8G4SFRA32A.C4FE 8GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
G Skill Intl F4-3200C16-32GTZN 32GB
SK Hynix HMT41GU7BFR8A-PB 8GB
Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB
A-DATA Technology DOVF1B163G2G 2GB
Micron Technology 18ASF2G72PDZ-2G3D1 16GB
Samsung M3 78T2863QZS-CF7 1GB
G Skill Intl F4-2400C17-8GIS 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Apacer Technology D12.2324CS.001 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Kingston KHX3466C19D4/16G 16GB
Corsair VSA2GSDS667C4 2GB
SK Hynix HMA851S6DJR6N-VK 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M471A2K43DB1-CWE 16GB
TwinMOS 8DHE3MN8-HATP 2GB
G Skill Intl F4-3200C16-16GVS 16GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Apacer Technology 78.CAGPP.ARC0B 8GB
A-DATA Technology DOVF1B163G2G 2GB
Gold Key Technology Co Ltd NMSO480E85-2666E 8GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Kingston CBD26D4S9S8ME-8 8GB
Report a bug
×
Bug description
Source link