RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 78T2953EZ3-CF7 1GB
G Skill Intl F4-3600C17-4GTZ 4GB
Compare
Samsung M3 78T2953EZ3-CF7 1GB vs G Skill Intl F4-3600C17-4GTZ 4GB
Overall score
Samsung M3 78T2953EZ3-CF7 1GB
Overall score
G Skill Intl F4-3600C17-4GTZ 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 78T2953EZ3-CF7 1GB
Report a bug
Faster reading speed, GB/s
4
21
Average value in the tests
Reasons to consider
G Skill Intl F4-3600C17-4GTZ 4GB
Report a bug
Below the latency in the PassMark tests, ns
22
58
Around -164% lower latency
Faster write speed, GB/s
17.7
1,950.7
Average value in the tests
Higher memory bandwidth, mbps
17000
6400
Around 2.66 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 78T2953EZ3-CF7 1GB
G Skill Intl F4-3600C17-4GTZ 4GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
58
22
Read speed, GB/s
4,241.0
21.0
Write speed, GB/s
1,950.7
17.7
Memory bandwidth, mbps
6400
17000
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
Timings / Clock speed
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
651
3987
Samsung M3 78T2953EZ3-CF7 1GB RAM comparisons
Corsair VS1GB800D2 1GB
Kingston KVR800D2N6/2G 2GB
G Skill Intl F4-3600C17-4GTZ 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingmax Semiconductor FLFE85F-C8KF9 2GB
Patriot Memory (PDP Systems) PSD34G13332 4GB
Corsair CMY8GX3M2A2666C10 4GB
DSL Memory D4SS1G081SH24A-A 8GB
A-DATA Technology AD73I1B1672EG 2GB
Kingston XRMWRN-MIE 16GB
Patriot Memory (PDP Systems) 1600 CL10 Series 8GB
Micron Technology AFSD416ES1P 16GB
Samsung M378B5173EB0-CK0 4GB
Crucial Technology BL16G32C16U4BL.M8FB1 16GB
A-DATA Technology DDR2 800G 2GB
Kingston HP26D4S9S1ME-4 4GB
Kingston 99P5471-002.A00LF 2GB
Patriot Memory (PDP Systems) 2666 C18 Series 16GB
Samsung M471B5173DB0-YK0 4GB
A-DATA Technology DDR4 3333 2OZ 4GB
A-DATA Technology DQVE1908 512MB
Kingston KHX4800C19D4/8GX 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Kingston 99U5702-089.A00G 8GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Transcend Information TS512MSH64V4H 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Mushkin 99[2/7/4]200F 8GB
Kingmax Semiconductor KLDD48F-B8KU5 1GB
G Skill Intl F4-3000C15-4GRR 4GB
Kingston 99U5471-056.A00LF 8GB
Samsung M393A2K43BB1-CPB 16GB
Report a bug
×
Bug description
Source link