RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 78T5663RZ3-CE6 2GB
Kingston 9965600-011.A01G 16GB
Compare
Samsung M3 78T5663RZ3-CE6 2GB vs Kingston 9965600-011.A01G 16GB
Overall score
Samsung M3 78T5663RZ3-CE6 2GB
Overall score
Kingston 9965600-011.A01G 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 78T5663RZ3-CE6 2GB
Report a bug
Faster reading speed, GB/s
4
10.7
Average value in the tests
Reasons to consider
Kingston 9965600-011.A01G 16GB
Report a bug
Below the latency in the PassMark tests, ns
46
60
Around -30% lower latency
Faster write speed, GB/s
8.1
2,168.2
Average value in the tests
Higher memory bandwidth, mbps
17000
5300
Around 3.21 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 78T5663RZ3-CE6 2GB
Kingston 9965600-011.A01G 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
60
46
Read speed, GB/s
4,595.2
10.7
Write speed, GB/s
2,168.2
8.1
Memory bandwidth, mbps
5300
17000
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
Timings / Clock speed
5-5-5-15 / 667 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
941
2239
Samsung M3 78T5663RZ3-CE6 2GB RAM comparisons
Samsung M3 78T5663DZ3-CE6 2GB
Kingston 9965640-016.A00G 32GB
Kingston 9965600-011.A01G 16GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
G Skill Intl F3-1866C8-8GTX 8GB
Corsair CMWX8GD3600C18W4 8GB
Samsung M3 78T5663RZ3-CE6 2GB
Kingston 9965600-011.A01G 16GB
Corsair CMZ16GX3M2A2400C10 8GB
Mushkin MRA4S266GHHF32G 32GB
AMD AE34G2139U2 4GB
Micron Technology 16ATF2G64HZ-2G6E1 16GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Micron Technology 72ASS8G72LZ-2G6D2 64GB
Samsung M391B5673FH0-CH9 2GB
G Skill Intl F4-3200C14-32GTRG 32GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N
G Skill Intl F3-10600CL9-2GBNT 2GB
Micron Technology 8ATF1G64AZ-2G6B1 8GB
Kingston K531R8-MIN 4GB
Crucial Technology BLS8G4D26BFSEK.8FD 8GB
Samsung M391B5673EH1-CH9 2GB
SK Hynix HMA451S6AFR8N-TF 4GB
Peak Electronics 256X64M-67E 2GB
SK Hynix HMAA2GU6CJR8N-XN 16GB
Samsung M471B5173QH0-YK0 4GB
Corsair CMD16GX4M4B3400C16 4GB
TwinMOS 9DNPBNZB-TATP 4GB
GIGA - BYTE Technology Co Ltd GR26C16S8K2HU416 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Kingston 99U5734-014.A00G 16GB
Report a bug
×
Bug description
Source link