Samsung M3 78T5663RZ3-CE6 2GB vs SK Hynix HMAA2GS6CJR8N-XN 16GB

Overall score

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

Overall score

SK Hynix HMAA2GS6CJR8N-XN 16GB

SK Hynix HMAA2GS6CJR8N-XN 16GB

Differences Specifications Comments

Differences

Samsung M3 78T5663RZ3-CE6 2GB

Reasons to consider
Samsung M3 78T5663RZ3-CE6 2GB

Faster reading speed, GB/s

4 16

Average value in the tests
Faster write speed, GB/s

2,168.2 12.9

Average value in the tests

SK Hynix HMAA2GS6CJR8N-XN 16GB

Reasons to consider
SK Hynix HMAA2GS6CJR8N-XN 16GB

Below the latency in the PassMark tests, ns

55 60

Around -9% lower latency
Higher memory bandwidth, mbps

25600 5300

Around 4.83 higher bandwidth

Specifications

Complete list of technical specifications

Samsung M3 78T5663RZ3-CE6 2GB

SK Hynix HMAA2GS6CJR8N-XN 16GB

Main characteristics

Memory type

DDR2 DDR4
Latency in PassMark, ns

60 55
Read speed, GB/s

4,595.2 16.0
Write speed, GB/s

2,168.2 12.9
Memory bandwidth, mbps

5300 25600

Other

Description

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
Timings / Clock speed

5-5-5-15 / 667 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)

941 2699

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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