Samsung M3 78T6553CZ3-CD5 512MB vs Galaxy Microsystems Ltd. GALAX OC LAB 8GB

Overall score

Samsung M3 78T6553CZ3-CD5 512MB

Samsung M3 78T6553CZ3-CD5 512MB

Overall score

Galaxy Microsystems Ltd. GALAX OC LAB 8GB

Galaxy Microsystems Ltd. GALAX OC LAB 8GB

Differences Specifications Comments

Differences

Samsung M3 78T6553CZ3-CD5 512MB

Reasons to consider
Samsung M3 78T6553CZ3-CD5 512MB

Faster reading speed, GB/s

3 19.7

Average value in the tests

Galaxy Microsystems Ltd. GALAX OC LAB 8GB

Reasons to consider
Galaxy Microsystems Ltd. GALAX OC LAB 8GB

Below the latency in the PassMark tests, ns

20 56

Around -180% lower latency
Faster write speed, GB/s

15.2 1,501.2

Average value in the tests
Higher memory bandwidth, mbps

17000 4200

Around 4.05 higher bandwidth

Specifications

Complete list of technical specifications

Samsung M3 78T6553CZ3-CD5 512MB

Galaxy Microsystems Ltd. GALAX OC LAB 8GB

Main characteristics

Memory type

DDR2 DDR4
Latency in PassMark, ns

56 20
Read speed, GB/s

3,161.0 19.7
Write speed, GB/s

1,501.2 15.2
Memory bandwidth, mbps

4200 17000

Other

Description

PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed

4-4-4-12 / 533 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)

381 3473

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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