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Samsung M3 93T5750CZA-CE6 2GB
Nanya Technology NT1GT64UH8D0FN-AD 1GB

Samsung M3 93T5750CZA-CE6 2GB vs Nanya Technology NT1GT64UH8D0FN-AD 1GB

Overall score
star star star star star
Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Overall score
star star star star star
Nanya Technology NT1GT64UH8D0FN-AD 1GB

Nanya Technology NT1GT64UH8D0FN-AD 1GB

Differences Specifications Comments

Differences

Samsung M3 93T5750CZA-CE6 2GB Reasons to consider
Samsung M3 93T5750CZA-CE6 2GB
Report a bug
  • Faster reading speed, GB/s
    3 left arrow 3
    Average value in the tests
  • Faster write speed, GB/s
    2,622.0 left arrow 1,569.0
    Average value in the tests
Nanya Technology NT1GT64UH8D0FN-AD 1GB Reasons to consider
Nanya Technology NT1GT64UH8D0FN-AD 1GB
Report a bug
  • Below the latency in the PassMark tests, ns
    66 left arrow 77
    Around -17% lower latency
  • Higher memory bandwidth, mbps
    6400 left arrow 5300
    Around 1.21 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M3 93T5750CZA-CE6 2GB
Nanya Technology NT1GT64UH8D0FN-AD 1GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR2
  • Latency in PassMark, ns
    77 left arrow 66
  • Read speed, GB/s
    3,405.2 left arrow 3,316.1
  • Write speed, GB/s
    2,622.0 left arrow 1,569.0
  • Memory bandwidth, mbps
    5300 left arrow 6400
Other
  • Description
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
  • Timings / Clock speed
    5-5-5-15 / 667 MHz left arrow 5-5-5-15 / 800 MHz
  • Ranking PassMark (The more the better)
    763 left arrow 472

Samsung M3 93T5750CZA-CE6 2GB RAM comparisons

takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB

Nanya Technology NT1GT64UH8D0FN-AD 1GB RAM comparisons

Nanya Technology NT512T64UH8B0FN-3C 512MB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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