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Samsung M378B5673EH1-CF8 2GB
Transcend Information JM3200HLB-16G 16GB

Samsung M378B5673EH1-CF8 2GB vs Transcend Information JM3200HLB-16G 16GB

Overall score
star star star star star
Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Overall score
star star star star star
Transcend Information JM3200HLB-16G 16GB

Transcend Information JM3200HLB-16G 16GB

Differences Specifications Comments

Differences

Samsung M378B5673EH1-CF8 2GB Reasons to consider
Samsung M378B5673EH1-CF8 2GB
Report a bug
  • Below the latency in the PassMark tests, ns
    28 left arrow 36
    Around 22% lower latency
Transcend Information JM3200HLB-16G 16GB Reasons to consider
Transcend Information JM3200HLB-16G 16GB
Report a bug
  • Faster reading speed, GB/s
    21.3 left arrow 12.7
    Average value in the tests
  • Faster write speed, GB/s
    16.8 left arrow 7.5
    Average value in the tests
  • Higher memory bandwidth, mbps
    25600 left arrow 8500
    Around 3.01 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M378B5673EH1-CF8 2GB
Transcend Information JM3200HLB-16G 16GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    28 left arrow 36
  • Read speed, GB/s
    12.7 left arrow 21.3
  • Write speed, GB/s
    7.5 left arrow 16.8
  • Memory bandwidth, mbps
    8500 left arrow 25600
Other
  • Description
    PC3-8500, 1.5V, CAS Supported: 6 7 8 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 22 24
  • Timings / Clock speed
    7-7-7-20 / 1066 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • Ranking PassMark (The more the better)
    1988 left arrow 3610

Samsung M378B5673EH1-CF8 2GB RAM comparisons

Nanya Technology M2X4G64CB8HG5N-DG 4GB
Kingston 9905403-831.A00LF 8GB

Transcend Information JM3200HLB-16G 16GB RAM comparisons

Crucial Technology CT16G4DFD8266.M16FJ 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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Latest comparisons

Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Transcend Information JM3200HLB-16G 16GB
Transcend Information JM3200HLB-16G 16GB
Memory RAM
Nanya Technology M2Y1G64TU8HB0B-25C 1GB
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G Skill Intl F4-4000C18-32GTRS 32GB
Memory RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-2133C15-8GRB 8GB
G Skill Intl F4-2133C15-8GRB 8GB
Memory RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
G Skill Intl F4-4000C18-8GVK 8GB
G Skill Intl F4-4000C18-8GVK 8GB
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Samsung M391B5273CH0-CH9 4GB
Samsung M391B5273CH0-CH9 4GB
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G Skill Intl F4-3000C15-4GVSB 4GB
Memory RAM
Nanya Technology NT512T64U88B0BY-3C 512MB
Nanya Technology NT512T64U88B0BY-3C 512MB
G Skill Intl F4-4266C16-8GTZR 8GB
G Skill Intl F4-4266C16-8GTZR 8GB
Memory RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Mushkin 99[2/7/4]191F 4GB
Mushkin 99[2/7/4]191F 4GB
Memory RAM
Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
Crucial Technology CT16G4DFD8266.C16FE 16GB
Crucial Technology CT16G4DFD8266.C16FE 16GB
Memory RAM
ASint Technology SSA302G08-EGN1C 4GB
ASint Technology SSA302G08-EGN1C 4GB
Avant Technology J641GU42J7240N3 8GB
Avant Technology J641GU42J7240N3 8GB
Memory RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-3600C16-32GTZR 32GB
G Skill Intl F4-3600C16-32GTZR 32GB
Memory RAM
Kingston ACR512X64D3S13C9G 4GB
Kingston ACR512X64D3S13C9G 4GB
Kllisre M378A5143EB2-CRC 4GB
Kllisre M378A5143EB2-CRC 4GB
Memory RAM
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
Kingston 9905704-007.A00G 4GB
Kingston 9905704-007.A00G 4GB
Memory RAM
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SK Hynix HMA451U6AFR8N-TF 4GB
Corsair CM4X8GF2133C15S2 8GB
Corsair CM4X8GF2133C15S2 8GB
Memory RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
G Skill Intl F4-3600C18-8GTZRX 8GB
G Skill Intl F4-3600C18-8GTZRX 8GB
Memory RAM