Samsung M378B5773CH0-CH9 2GB vs Wilk Elektronik S.A. IRP3600D4V64L17/16G 16GB

Overall score

Samsung M378B5773CH0-CH9 2GB

Samsung M378B5773CH0-CH9 2GB

Overall score

Wilk Elektronik S.A. IRP3600D4V64L17/16G 16GB

Wilk Elektronik S.A. IRP3600D4V64L17/16G 16GB

Differences Specifications Comments

Differences

Samsung M378B5773CH0-CH9 2GB

Reasons to consider
Samsung M378B5773CH0-CH9 2GB

Wilk Elektronik S.A. IRP3600D4V64L17/16G 16GB

Reasons to consider
Wilk Elektronik S.A. IRP3600D4V64L17/16G 16GB

Below the latency in the PassMark tests, ns

29 39

Around -34% lower latency
Faster reading speed, GB/s

18.8 12.8

Average value in the tests
Faster write speed, GB/s

14.3 7.4

Average value in the tests
Higher memory bandwidth, mbps

17000 10600

Around 1.6 higher bandwidth

Specifications

Complete list of technical specifications

Samsung M378B5773CH0-CH9 2GB

Wilk Elektronik S.A. IRP3600D4V64L17/16G 16GB

Main characteristics

Memory type

DDR3 DDR4
Latency in PassMark, ns

39 29
Read speed, GB/s

12.8 18.8
Write speed, GB/s

7.4 14.3
Memory bandwidth, mbps

10600 17000

Other

Description

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
Timings / Clock speed

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)

1770 3611

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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