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Samsung M393A1G40DB0-B`B 8GB
Nanya Technology M2F4GH64CB8HB6N-DI 4GB

Samsung M393A1G40DB0-B`B 8GB vs Nanya Technology M2F4GH64CB8HB6N-DI 4GB

Overall score
star star star star star
Samsung M393A1G40DB0-B`B 8GB

Samsung M393A1G40DB0-B`B 8GB

Overall score
star star star star star
Nanya Technology M2F4GH64CB8HB6N-DI 4GB

Nanya Technology M2F4GH64CB8HB6N-DI 4GB

Differences Specifications Comments

Differences

Samsung M393A1G40DB0-B`B 8GB Reasons to consider
Samsung M393A1G40DB0-B`B 8GB
Report a bug
  • Higher memory bandwidth, mbps
    17000 left arrow 12800
    Around 1.33% higher bandwidth
Nanya Technology M2F4GH64CB8HB6N-DI 4GB Reasons to consider
Nanya Technology M2F4GH64CB8HB6N-DI 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    25 left arrow 33
    Around -32% lower latency
  • Faster reading speed, GB/s
    15.2 left arrow 10.4
    Average value in the tests
  • Faster write speed, GB/s
    9.4 left arrow 5.5
    Average value in the tests

Specifications

Complete list of technical specifications
Samsung M393A1G40DB0-B`B 8GB
Nanya Technology M2F4GH64CB8HB6N-DI 4GB
Main characteristics
  • Memory type
    DDR4 left arrow DDR3
  • Latency in PassMark, ns
    33 left arrow 25
  • Read speed, GB/s
    10.4 left arrow 15.2
  • Write speed, GB/s
    5.5 left arrow 9.4
  • Memory bandwidth, mbps
    17000 left arrow 12800
Other
  • Description
    PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 left arrow PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
  • Timings / Clock speed
    14-14-14, 15-15-15, 16-16-16 / 2133 MHz left arrow 9-9-9-24 / 1600 MHz
  • Ranking PassMark (The more the better)
    1806 left arrow 2415

Samsung M393A1G40DB0-B`B 8GB RAM comparisons

Crucial Technology BLT16G4D30AETA.K16FB 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB

Nanya Technology M2F4GH64CB8HB6N-DI 4GB RAM comparisons

Samsung M393B2G70BH0-CK0 16GB
A-DATA Technology AM2L16BC4R1-B0WS 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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