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Samsung M393B1K70CH0-YH9 8GB
A-DATA Technology AO1P32NCSV1-BEWS 16GB

Samsung M393B1K70CH0-YH9 8GB vs A-DATA Technology AO1P32NCSV1-BEWS 16GB

Overall score
star star star star star
Samsung M393B1K70CH0-YH9 8GB

Samsung M393B1K70CH0-YH9 8GB

Overall score
star star star star star
A-DATA Technology AO1P32NCSV1-BEWS 16GB

A-DATA Technology AO1P32NCSV1-BEWS 16GB

Differences Specifications Comments

Differences

Samsung M393B1K70CH0-YH9 8GB Reasons to consider
Samsung M393B1K70CH0-YH9 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    49 left arrow 60
    Around 18% lower latency
A-DATA Technology AO1P32NCSV1-BEWS 16GB Reasons to consider
A-DATA Technology AO1P32NCSV1-BEWS 16GB
Report a bug
  • Faster reading speed, GB/s
    15 left arrow 10.1
    Average value in the tests
  • Faster write speed, GB/s
    12.8 left arrow 7.8
    Average value in the tests
  • Higher memory bandwidth, mbps
    25600 left arrow 10600
    Around 2.42 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M393B1K70CH0-YH9 8GB
A-DATA Technology AO1P32NCSV1-BEWS 16GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    49 left arrow 60
  • Read speed, GB/s
    10.1 left arrow 15.0
  • Write speed, GB/s
    7.8 left arrow 12.8
  • Memory bandwidth, mbps
    10600 left arrow 25600
Other
  • Description
    PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 22 24
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • Ranking PassMark (The more the better)
    2070 left arrow 2554

Samsung M393B1K70CH0-YH9 8GB RAM comparisons

Samsung M393B1K70CH0-CH9 8GB
Samsung M392B1K70CM0-YH9 8GB

A-DATA Technology AO1P32NCSV1-BEWS 16GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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