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Samsung M395T2863QZ4-CF76 1GB
AMD R7S44G2606U1S 4GB

Samsung M395T2863QZ4-CF76 1GB vs AMD R7S44G2606U1S 4GB

Overall score
star star star star star
Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Overall score
star star star star star
AMD R7S44G2606U1S 4GB

AMD R7S44G2606U1S 4GB

Differences Specifications Comments

Differences

Samsung M395T2863QZ4-CF76 1GB Reasons to consider
Samsung M395T2863QZ4-CF76 1GB
Report a bug
  • Faster reading speed, GB/s
    3 left arrow 18.9
    Average value in the tests
  • Faster write speed, GB/s
    2,404.5 left arrow 14.3
    Average value in the tests
AMD R7S44G2606U1S 4GB Reasons to consider
AMD R7S44G2606U1S 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    20 left arrow 104
    Around -420% lower latency
  • Higher memory bandwidth, mbps
    21300 left arrow 6400
    Around 3.33 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M395T2863QZ4-CF76 1GB
AMD R7S44G2606U1S 4GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    104 left arrow 20
  • Read speed, GB/s
    3,192.0 left arrow 18.9
  • Write speed, GB/s
    2,404.5 left arrow 14.3
  • Memory bandwidth, mbps
    6400 left arrow 21300
Other
  • Description
    PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • Timings / Clock speed
    no data left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • Ranking PassMark (The more the better)
    786 left arrow 2707

Samsung M395T2863QZ4-CF76 1GB RAM comparisons

takeMS International AG TMS2GS264D081805AV 2GB
Micron Technology 8HTF12864HDZ-800E1 1GB

AMD R7S44G2606U1S 4GB RAM comparisons

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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