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Samsung M395T2863QZ4-CF76 1GB
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB

Samsung M395T2863QZ4-CF76 1GB vs Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB

Overall score
star star star star star
Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Overall score
star star star star star
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB

Differences Specifications Comments

Differences

Samsung M395T2863QZ4-CF76 1GB Reasons to consider
Samsung M395T2863QZ4-CF76 1GB
Report a bug
  • Faster reading speed, GB/s
    3 left arrow 19.5
    Average value in the tests
  • Faster write speed, GB/s
    2,404.5 left arrow 15.8
    Average value in the tests
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    19 left arrow 104
    Around -447% lower latency
  • Higher memory bandwidth, mbps
    19200 left arrow 6400
    Around 3 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M395T2863QZ4-CF76 1GB
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    104 left arrow 19
  • Read speed, GB/s
    3,192.0 left arrow 19.5
  • Write speed, GB/s
    2,404.5 left arrow 15.8
  • Memory bandwidth, mbps
    6400 left arrow 19200
Other
  • Description
    PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6 left arrow PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
  • Timings / Clock speed
    no data left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    786 left arrow 3435

Samsung M395T2863QZ4-CF76 1GB RAM comparisons

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Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB RAM comparisons

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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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