RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M4 70T5663CZ3-CE6 2GB
Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB
Compare
Samsung M4 70T5663CZ3-CE6 2GB vs Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB
Overall score
Samsung M4 70T5663CZ3-CE6 2GB
Overall score
Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M4 70T5663CZ3-CE6 2GB
Report a bug
Faster reading speed, GB/s
3
17.3
Average value in the tests
Reasons to consider
Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB
Report a bug
Below the latency in the PassMark tests, ns
22
69
Around -214% lower latency
Faster write speed, GB/s
13.7
1,441.2
Average value in the tests
Higher memory bandwidth, mbps
17000
5300
Around 3.21 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M4 70T5663CZ3-CE6 2GB
Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
69
22
Read speed, GB/s
3,325.1
17.3
Write speed, GB/s
1,441.2
13.7
Memory bandwidth, mbps
5300
17000
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 12 14 15
Timings / Clock speed
5-5-5-15 / 667 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
525
3051
Samsung M4 70T5663CZ3-CE6 2GB RAM comparisons
Samsung M4 70T5663QZ3-CE6 2GB
Nanya Technology NT2GT64U8HD0BN-3C 2GB
Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB RAM comparisons
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M4 70T5663CZ3-CE6 2GB
Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB
SK Hynix HMT451S6BFR8A-PB 4GB
Hewlett-Packard 7EH55AA# 8GB
Kingston 9905316-106.A02LF 1GB
Corsair CM4X4GD3000C15K4 4GB
PNY Electronics PNY 2GB
INTENSO 5641152 4GB
Samsung M471A2K43CB1-CTD 16GB
Samsung M471A1K43BB1-CRC 8GB
Samsung 1600 CL10 Series 8GB
G Skill Intl F4-3200C16-16GIS 16GB
A-DATA Technology AM2L16BC4R1-B0CS 4GB
G Skill Intl F4-3200C16-8GVKB 8GB
A-DATA Technology AD73I1C1674EV 4GB
Mushkin 99[2/7/4]191[F/T] 4GB
Kingston 9905471-071.A00LF 8GB
Corsair CM4X8GE2400C16K4 8GB
A-DATA Technology DDR3 1866 2OZ 4GB
Smart Modular SF4642G8CK8I8HLSBG 16GB
Corsair CMZ16GX3M2A2400C10 8GB
Crucial Technology CT8G4SFS824A.C8FDR1 8GB
Kingston ACR16D3LS1NGG/2G 2GB
Kingston 9905701-018.A00G 16GB
Kingston 99U5428-101.A00LF 8GB
Kingston 99U5428-100.A00LF 8GB
Kingston 9965433-034.A00LF 4GB
Corsair CMV4GX4M1A2400C16 4GB
Report a bug
×
Bug description
Source link