RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M471B5273EB0-CK0 4GB
G Skill Intl F4-2400C15-8GVB 8GB
Compare
Samsung M471B5273EB0-CK0 4GB vs G Skill Intl F4-2400C15-8GVB 8GB
Overall score
Samsung M471B5273EB0-CK0 4GB
Overall score
G Skill Intl F4-2400C15-8GVB 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471B5273EB0-CK0 4GB
Report a bug
Reasons to consider
G Skill Intl F4-2400C15-8GVB 8GB
Report a bug
Below the latency in the PassMark tests, ns
33
40
Around -21% lower latency
Faster reading speed, GB/s
15.9
12.3
Average value in the tests
Faster write speed, GB/s
12.1
8.9
Average value in the tests
Higher memory bandwidth, mbps
17000
12800
Around 1.33 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M471B5273EB0-CK0 4GB
G Skill Intl F4-2400C15-8GVB 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
40
33
Read speed, GB/s
12.3
15.9
Write speed, GB/s
8.9
12.1
Memory bandwidth, mbps
12800
17000
Other
Description
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
Timings / Clock speed
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
1789
2994
Samsung M471B5273EB0-CK0 4GB RAM comparisons
A-DATA Technology AD73I1C1674EV 4GB
Samsung M378B1G73DB0-CK0 8GB
G Skill Intl F4-2400C15-8GVB 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT51264BD1339.M16F 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Nanya Technology M2Y1G64TU8HB0B-25C 1GB
Team Group Inc. TEAMGROUP-ED4-2400 16GB
Samsung M471B5273EB0-CK0 4GB
G Skill Intl F4-2400C15-8GVB 8GB
Samsung M471B5173QH0-YK0 4GB
Patriot Memory (PDP Systems) 4266 C18 Series 8GB
Crucial Technology CT51264AC800.C16FC 4GB
G Skill Intl F4-3600C18-16GTRG 16GB
Samsung M378B5673EH1-CF8 2GB
SK Hynix HMA82GS6DJR8N-XN 16GB
Nanya Technology NT512T64U88B0BY-3C 512MB
Kingston XK2M26-MIE 16GB
A-DATA Technology DQVE1908 512MB
Crucial Technology BL8G24C16U4B.8FB 8GB
G Skill Intl F3-12800CL7-4GBXM 4GB
G Skill Intl F4-3000C16-16GTZN 16GB
Kingston KTC1G-UDIMM 1GB
Patriot Memory (PDP Systems) 3733 C17 Series 8GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Smart Modular SF4641G8CKHI6DFSEG 8GB
Kingston 9965433-034.A00LF 4GB
G Skill Intl F4-3000C15-8GVS 8GB
G Skill Intl F3-2133C9-4GAB 4GB
Xinshirui (Shenzhen) Electronics Co V01D4L84GB528528266
SK Hynix HMA82GS6CJR8N-VK 16GB
G Skill Intl F4-4400C16-8GVK 8GB
AMD R538G1601U2S 8GB
Kingston KHX2666C13/8GX 8GB
Report a bug
×
Bug description
Source link