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Samsung M471B5273EB0-CK0 4GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB

Samsung M471B5273EB0-CK0 4GB vs Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB

Overall score
star star star star star
Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

Overall score
star star star star star
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB

Differences Specifications Comments

Differences

Samsung M471B5273EB0-CK0 4GB Reasons to consider
Samsung M471B5273EB0-CK0 4GB
Report a bug
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB
Report a bug
  • Below the latency in the PassMark tests, ns
    18 left arrow 40
    Around -122% lower latency
  • Faster reading speed, GB/s
    20.4 left arrow 12.3
    Average value in the tests
  • Faster write speed, GB/s
    17.2 left arrow 8.9
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 12800
    Around 1.5 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M471B5273EB0-CK0 4GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    40 left arrow 18
  • Read speed, GB/s
    12.3 left arrow 20.4
  • Write speed, GB/s
    8.9 left arrow 17.2
  • Memory bandwidth, mbps
    12800 left arrow 19200
Other
  • Description
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    1789 left arrow 3814

Samsung M471B5273EB0-CK0 4GB RAM comparisons

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Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB RAM comparisons

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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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