RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M471B5673FH0-CF8 2GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N-VK 16GB
Compare
Samsung M471B5673FH0-CF8 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N-VK 16GB
Overall score
Samsung M471B5673FH0-CF8 2GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N-VK 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471B5673FH0-CF8 2GB
Report a bug
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N-VK 16GB
Report a bug
Faster reading speed, GB/s
14.5
10.6
Average value in the tests
Faster write speed, GB/s
9.0
6.8
Average value in the tests
Higher memory bandwidth, mbps
21300
8500
Around 2.51 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M471B5673FH0-CF8 2GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N-VK 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
30
30
Read speed, GB/s
10.6
14.5
Write speed, GB/s
6.8
9.0
Memory bandwidth, mbps
8500
21300
Other
Description
PC3-8500, 1.5V, CAS Supported: 5 6 7 8
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
7-7-7-20 / 1066 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
1479
2374
Samsung M471B5673FH0-CF8 2GB RAM comparisons
Kingston 99U5403-036.A00G 4GB
Hynix Semiconductor (Hyundai Electronics) HMT112U6TFR8C-H9 1GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N-VK 16GB RAM comparisons
Kingston KVR16N11/8-SP 8GB
Samsung M471B5773DH0-CK0 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston 99U5471-020.A00LF 4GB
Kingmax Semiconductor GLNH23F-18---------- 16GB
Samsung M471B5673FH0-CF8 2GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N
Samsung M393B2G70BH0-CK0 16GB
Gloway International (HK) STKD4XMP2400-F 4GB
AMD R538G1601U2S 8GB
Crucial Technology CB8GS2400.C8D 8GB
Samsung M3 78T2953EZ3-CF7 1GB
Corsair CMD32GX4M4B2400C10 8GB
TwinMOS 8DPT5MK8-TATP 2GB
G Skill Intl F4-3200C16-8GTZ 8GB
Kingston 99U5474-010.A00LF 2GB
Gloway International Co. Ltd. TYP4U3000E16082C 8GB
Samsung M471B5173QH0-YK0 4GB
G Skill Intl F4-3600C15-8GTZ 8GB
Kingston KHX1600C10D3/8GXF 8GB
Corsair CMSX64GX4M2A2933C19 32GB
Corsair CMY8GX3M2A2666C10 4GB
G Skill Intl F4-3600C14-8GTZRA 8GB
G Skill Intl F3-1333C9-4GIS 4GB
Crucial Technology BLS8G4D240FSB.16FBR2 8GB
Samsung M378B5673EH1-CF8 2GB
Crucial Technology CT16G4DFD824A.C16FE 16GB
TwinMOS 8DPT5MK8-TATP 2GB
Corsair CMU32GX4M4C3000C16 8GB
AMD R538G1601U2S 8GB
V-Color Technology Inc. TA48G32S816SK 8GB
Report a bug
×
Bug description
Source link