RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M471B5673FH0-CF8 2GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Compare
Samsung M471B5673FH0-CF8 2GB vs Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Overall score
Samsung M471B5673FH0-CF8 2GB
Overall score
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471B5673FH0-CF8 2GB
Report a bug
Below the latency in the PassMark tests, ns
30
71
Around 58% lower latency
Faster write speed, GB/s
6.8
6.4
Average value in the tests
Reasons to consider
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Report a bug
Faster reading speed, GB/s
15.6
10.6
Average value in the tests
Higher memory bandwidth, mbps
21300
8500
Around 2.51 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M471B5673FH0-CF8 2GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
30
71
Read speed, GB/s
10.6
15.6
Write speed, GB/s
6.8
6.4
Memory bandwidth, mbps
8500
21300
Other
Description
PC3-8500, 1.5V, CAS Supported: 5 6 7 8
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
7-7-7-20 / 1066 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
1479
1650
Samsung M471B5673FH0-CF8 2GB RAM comparisons
Kingston 99U5403-036.A00G 4GB
Hynix Semiconductor (Hyundai Electronics) HMT112U6TFR8C-H9 1GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB RAM comparisons
Apacer Technology AQD-D4U8GN24-SE 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston KHX318C10FR/8G 8GB
Corsair CMD16GX4M4B3400C16 4GB
Samsung M471B5673FH0-CF8 2GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Kingston 9905700-046.A00G 16GB
Corsair CM2X1024-6400 1GB
Corsair CMD16GX4M4B3200C14 4GB
A-DATA Technology DQKD1A08 1GB
Cortus SAS 8ATF51264AZ-2G1A1 4GB
Samsung M471B5273DH0-CH9 4GB
Smart Modular SF4641G8CKHI6DFSEG 8GB
TwinMOS 8DPT5MK8-TATP 2GB
Gloway International Co. Ltd. WAR4U2666D19081C 8GB
Elpida EBJ81UG8BBU0-GN-F 8GB
G Skill Intl F4-4000C15-8GTRS 8GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Transcend Information AQD-D4U4GN21-SG 4GB
Micron Technology 16JTF1G64AZ-1G6E1 8GB
Kingston KF3200C16D4/8GX 8GB
Samsung M378A1G43DB0-CPB 8GB
Kingston X3XCFP-HYA 8GB
G Skill Intl F4-3600C16-32GVK 32GB
G Skill Intl F4-3200C16-8GVKB 8GB
Kingston 9905469-153.A00LF 4GB
Kingston 99U5678-029.A00G 8GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
Crucial Technology CT8G4SFD824A.C16FBD1 8GB
Report a bug
×
Bug description
Source link