RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M471B5673FH0-CF8 2GB
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
Compare
Samsung M471B5673FH0-CF8 2GB vs Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
Overall score
Samsung M471B5673FH0-CF8 2GB
Overall score
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471B5673FH0-CF8 2GB
Report a bug
Below the latency in the PassMark tests, ns
30
31
Around 3% lower latency
Reasons to consider
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
Report a bug
Faster reading speed, GB/s
20.5
10.6
Average value in the tests
Faster write speed, GB/s
15.5
6.8
Average value in the tests
Higher memory bandwidth, mbps
25600
8500
Around 3.01 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M471B5673FH0-CF8 2GB
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
30
31
Read speed, GB/s
10.6
20.5
Write speed, GB/s
6.8
15.5
Memory bandwidth, mbps
8500
25600
Other
Description
PC3-8500, 1.5V, CAS Supported: 5 6 7 8
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
Timings / Clock speed
7-7-7-20 / 1066 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
1479
3649
Samsung M471B5673FH0-CF8 2GB RAM comparisons
Kingston 99U5403-036.A00G 4GB
Hynix Semiconductor (Hyundai Electronics) HMT112U6TFR8C-H9 1GB
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M378B5773DH0-CH9 2GB
G Skill Intl F4-4400C18-8GTZRC 8GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Crucial Technology CT8G4SFRA266.M16FG 8GB
Kingston 99P5471-002.AOOLF 4GB
Corsair CMK16GX4M2E3200C16 8GB
Kingston KHX318C10FR/8G 8GB
Ramsta Ramsta-2666MHz-4G 4GB
Samsung M471B1G73QH0-YK0 8GB
Kingston KHX2133C14D4/8G 8GB
Samsung M471B5673FH0-CF8 2GB
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
Crucial Technology CT25664BA160B.C16F 2GB
SK Hynix HMA81GU6CJR8N-UH 8GB
A-DATA Technology DQVE1908 512MB
Crucial Technology CT16G4SFRA32A.C16FJ 16GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Kingston 99U5663-007.A00G 16GB
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F4-4400C19-8GTZKK 8GB
Crucial Technology CT51264BD1339.M16F 4GB
V-Color Technology Inc. TL48G32S8RRGB16 8GB
Corsair CMV4GX3M1B1600C11 4GB
Kingston KHX2933C17D4/16G 16GB
Samsung M471A5244CB0-CWE 4GB
Kingston 9965589-017.D00G 8GB
Kingston 99U5471-033.A00LF 4GB
G Skill Intl F4-4400C19-16GTZR 16GB
Report a bug
×
Bug description
Source link