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Samsung M471B5773DH0-CH9 2GB
ASint Technology SSZ3128M8-EDJ1D 2GB

Samsung M471B5773DH0-CH9 2GB vs ASint Technology SSZ3128M8-EDJ1D 2GB

Overall score
star star star star star
Samsung M471B5773DH0-CH9 2GB

Samsung M471B5773DH0-CH9 2GB

Overall score
star star star star star
ASint Technology SSZ3128M8-EDJ1D 2GB

ASint Technology SSZ3128M8-EDJ1D 2GB

Differences Specifications Comments

Differences

Samsung M471B5773DH0-CH9 2GB Reasons to consider
Samsung M471B5773DH0-CH9 2GB
Report a bug
ASint Technology SSZ3128M8-EDJ1D 2GB Reasons to consider
ASint Technology SSZ3128M8-EDJ1D 2GB
Report a bug
  • Below the latency in the PassMark tests, ns
    28 left arrow 43
    Around -54% lower latency
  • Faster reading speed, GB/s
    11.6 left arrow 11
    Average value in the tests
  • Faster write speed, GB/s
    8.1 left arrow 7.2
    Average value in the tests

Specifications

Complete list of technical specifications
Samsung M471B5773DH0-CH9 2GB
ASint Technology SSZ3128M8-EDJ1D 2GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR3
  • Latency in PassMark, ns
    43 left arrow 28
  • Read speed, GB/s
    11.0 left arrow 11.6
  • Write speed, GB/s
    7.2 left arrow 8.1
  • Memory bandwidth, mbps
    10600 left arrow 10600
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC3-10600, 1.5V, CAS Supported: 6 7 8 9
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 7-7-7-20 / 1333 MHz
  • Ranking PassMark (The more the better)
    1393 left arrow 1635

Samsung M471B5773DH0-CH9 2GB RAM comparisons

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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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Latest comparisons

Samsung M471B5773DH0-CH9 2GB
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ASint Technology SSZ3128M8-EDJ1D 2GB
ASint Technology SSZ3128M8-EDJ1D 2GB
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