RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M471B5773DH0-CK0 2GB
Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 16GB
Compare
Samsung M471B5773DH0-CK0 2GB vs Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 16GB
Overall score
Samsung M471B5773DH0-CK0 2GB
Overall score
Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471B5773DH0-CK0 2GB
Report a bug
Below the latency in the PassMark tests, ns
27
86
Around 69% lower latency
Reasons to consider
Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 16GB
Report a bug
Faster reading speed, GB/s
14.3
12.2
Average value in the tests
Faster write speed, GB/s
8.1
7.8
Average value in the tests
Higher memory bandwidth, mbps
21300
12800
Around 1.66 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M471B5773DH0-CK0 2GB
Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
27
86
Read speed, GB/s
12.2
14.3
Write speed, GB/s
7.8
8.1
Memory bandwidth, mbps
12800
21300
Other
Description
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Timings / Clock speed
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
1763
1658
Samsung M471B5773DH0-CK0 2GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Nanya Technology NT2GC64B8HC0NF-CG 2GB
Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 16GB RAM comparisons
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M471B5773DH0-CK0 2GB
Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 1
Corsair CMZ16GX3M2A2400C10 8GB
G Skill Intl F4-2800C14-16GVK 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Micron Technology 8ATF1G64HZ-2G2G1 8GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Crucial Technology BLT8G4D30BET4K.C8FD 8GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Corsair CMW32GX4M4C3000C15 8GB
Samsung M386B4G70DM0-CMA4 32GB
Apacer Technology D12.2326WH.001 16GB
Samsung M391B5673EH1-CH9 2GB
Thermaltake Technology Co Ltd R022D408GX2-3600C18A 8GB
Samsung M378B5673EH1-CF8 2GB
Kingston 9932291-002.A00G 4GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Crucial Technology BLS4G4D240FSC.8FARG 4GB
G Skill Intl F3-14900CL10-8GBXL 8GB
Patriot Memory (PDP Systems) 1866 CL10 Series 8GB
Samsung M393B2G70BH0-CH9 16GB
Apacer Technology 78.C1GQ5.C7C0B 8GB
Samsung M393B1K70CH0-CH9 8GB
G Skill Intl F4-3200C16-8GTZKY 8GB
Samsung M3 78T2863EHS-CF7 1GB
Kingston HX432C15PB3/16 16GB
Kingston 9965525-140.A00LF 8GB
Crucial Technology CT16G4SFD8213.C16FDD 16GB
Report a bug
×
Bug description
Source link