RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
en
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
SK Hynix HYMP112U64CP8-Y5 1GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

SK Hynix HYMP112U64CP8-Y5 1GB vs Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

Overall score
star star star star star
SK Hynix HYMP112U64CP8-Y5 1GB

SK Hynix HYMP112U64CP8-Y5 1GB

Overall score
star star star star star
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

Differences Specifications Comments

Differences

SK Hynix HYMP112U64CP8-Y5 1GB Reasons to consider
SK Hynix HYMP112U64CP8-Y5 1GB
Report a bug
  • Below the latency in the PassMark tests, ns
    62 left arrow 71
    Around 13% lower latency
  • Faster reading speed, GB/s
    4 left arrow 15.6
    Average value in the tests
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB Reasons to consider
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Report a bug
  • Faster write speed, GB/s
    6.4 left arrow 1,658.4
    Average value in the tests
  • Higher memory bandwidth, mbps
    21300 left arrow 5300
    Around 4.02 higher bandwidth

Specifications

Complete list of technical specifications
SK Hynix HYMP112U64CP8-Y5 1GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    62 left arrow 71
  • Read speed, GB/s
    4,216.7 left arrow 15.6
  • Write speed, GB/s
    1,658.4 left arrow 6.4
  • Memory bandwidth, mbps
    5300 left arrow 21300
Other
  • Description
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • Timings / Clock speed
    5-5-5-15 / 667 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • Ranking PassMark (The more the better)
    688 left arrow 1650

SK Hynix HYMP112U64CP8-Y5 1GB RAM comparisons

SK Hynix HYMP112U64CP8-S6 1GB
AMD R748G2606U2S 8GB

Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB RAM comparisons

Apacer Technology AQD-D4U8GN24-SE 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

Latest comparisons

SK Hynix HYMP112U64CP8-Y5 1GB
SK Hynix HYMP112U64CP8-Y5 1GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Memory RAM
Ramos Technology EWB8GB681CA3-16IC 8GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Wilk Elektronik S.A. GR2666D464L19S/8G 8GB
Wilk Elektronik S.A. GR2666D464L19S/8G 8GB
Memory RAM
Kingston KHX1600C9D3/4GX 4GB
Kingston KHX1600C9D3/4GX 4GB
Ramaxel Technology RMSA3260MH78H8H-2666 8GB
Ramaxel Technology RMSA3260MH78H8H-2666 8GB
Memory RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS16G4D26BFSC.16FBD 16GB
Crucial Technology BLS16G4D26BFSC.16FBD 16GB
Memory RAM
Kingston KHX1600C9S3L/8G 8GB
Kingston KHX1600C9S3L/8G 8GB
Apacer Technology 78.CAGMT.40C0B 8GB
Apacer Technology 78.CAGMT.40C0B 8GB
Memory RAM
G Skill Intl F3-17000CL9-4GBXLD 4GB
G Skill Intl F3-17000CL9-4GBXLD 4GB
Kingston 9905625-065.A00G 16GB
Kingston 9905625-065.A00G 16GB
Memory RAM
SK Hynix HMT351R7EFR8C-RD 4GB
SK Hynix HMT351R7EFR8C-RD 4GB
Panram International Corporation PUD42133C158G2VS 8GB
Panram International Corporation PUD42133C158G2VS 8GB
Memory RAM
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3000 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3000 8GB
Corsair CMK16GX4M2B3000C15 8GB
Corsair CMK16GX4M2B3000C15 8GB
Memory RAM
Corsair VS1GB800D2 1GB
Corsair VS1GB800D2 1GB
Kingston KHX2666C15D4/8G 8GB
Kingston KHX2666C15D4/8G 8GB
Memory RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Kingston HX426C16FB2/8-SP 8GB
Kingston HX426C16FB2/8-SP 8GB
Memory RAM
Ramaxel Technology RMT3160ED58E9W1600 4GB
Ramaxel Technology RMT3160ED58E9W1600 4GB
Chun Well Technology Holding Limited CL19-19-19 D4-2666 16GB
Chun Well Technology Holding Limited CL19-19-19 D4-2666
Memory RAM
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Crucial Technology BLS8G4D26BFSB.16FBR2 8GB
Crucial Technology BLS8G4D26BFSB.16FBR2 8GB
Memory RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Kingston 9965600-005.A00G 16GB
Kingston 9965600-005.A00G 16GB
Memory RAM
Nanya Technology NT512T64UH8B0FN-3C 512MB
Nanya Technology NT512T64UH8B0FN-3C 512MB
Teikon TMA41GU6AFR8N-TFSC 8GB
Teikon TMA41GU6AFR8N-TFSC 8GB
Memory RAM