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SK Hynix HYMP125U64CP8-S6 2GB
Samsung M4 70T5663QZ3-CE6 2GB

SK Hynix HYMP125U64CP8-S6 2GB vs Samsung M4 70T5663QZ3-CE6 2GB

Overall score
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SK Hynix HYMP125U64CP8-S6 2GB

SK Hynix HYMP125U64CP8-S6 2GB

Overall score
star star star star star
Samsung M4 70T5663QZ3-CE6 2GB

Samsung M4 70T5663QZ3-CE6 2GB

Differences Specifications Comments

Differences

SK Hynix HYMP125U64CP8-S6 2GB Reasons to consider
SK Hynix HYMP125U64CP8-S6 2GB
Report a bug
  • Below the latency in the PassMark tests, ns
    60 left arrow 68
    Around 12% lower latency
  • Faster reading speed, GB/s
    5 left arrow 3
    Average value in the tests
  • Faster write speed, GB/s
    2,381.6 left arrow 1,702.6
    Average value in the tests
  • Higher memory bandwidth, mbps
    6400 left arrow 5300
    Around 1.21% higher bandwidth
Samsung M4 70T5663QZ3-CE6 2GB Reasons to consider
Samsung M4 70T5663QZ3-CE6 2GB
Report a bug

Specifications

Complete list of technical specifications
SK Hynix HYMP125U64CP8-S6 2GB
Samsung M4 70T5663QZ3-CE6 2GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR2
  • Latency in PassMark, ns
    60 left arrow 68
  • Read speed, GB/s
    5,082.2 left arrow 3,886.6
  • Write speed, GB/s
    2,381.6 left arrow 1,702.6
  • Memory bandwidth, mbps
    6400 left arrow 5300
Other
  • Description
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
  • Timings / Clock speed
    5-5-5-15 / 800 MHz left arrow 5-5-5-15 / 667 MHz
  • Ranking PassMark (The more the better)
    925 left arrow 654

SK Hynix HYMP125U64CP8-S6 2GB RAM comparisons

A-DATA Technology DQKD1A08 1GB

Samsung M4 70T5663QZ3-CE6 2GB RAM comparisons

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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