RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
SK Hynix HYMP512U64CP8-Y5 1GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB
Compare
SK Hynix HYMP512U64CP8-Y5 1GB vs Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB
Overall score
SK Hynix HYMP512U64CP8-Y5 1GB
Overall score
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
SK Hynix HYMP512U64CP8-Y5 1GB
Report a bug
Below the latency in the PassMark tests, ns
63
73
Around 14% lower latency
Faster reading speed, GB/s
3
15.1
Average value in the tests
Reasons to consider
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB
Report a bug
Faster write speed, GB/s
7.9
1,583.7
Average value in the tests
Higher memory bandwidth, mbps
19200
5300
Around 3.62 higher bandwidth
Specifications
Complete list of technical specifications
SK Hynix HYMP512U64CP8-Y5 1GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
63
73
Read speed, GB/s
3,895.6
15.1
Write speed, GB/s
1,583.7
7.9
Memory bandwidth, mbps
5300
19200
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
639
1724
SK Hynix HYMP512U64CP8-Y5 1GB RAM comparisons
Nanya Technology M2Y1G64TU8HB0B-25C 1GB
Nanya Technology NT1GT64U8HB0BY-3C 1GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB RAM comparisons
TwinMOS 8DHE3MN8-HATP 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M393B1K70CH0-YH9 8GB
A-DATA Technology AO2P21FC8R2-BRGS 8GB
Samsung M378B5773DH0-CH9 2GB
G Skill Intl F4-3466C16-8GTZSK 8GB
Kingston KVR533D2N4 512MB
Corsair CMV8GX4M1A2133C15 8GB
Crucial Technology CT102464BF160B-16F 8GB
Crucial Technology BLS4G4S240FSD.8FBD 4GB
Hexon Technology Pte Ltd HEXON 1GB
Crucial Technology CT4G4SFS824A.C8FE 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Samsung M471A2K43BB1-CTD 16GB
PNY Electronics PNY 2GB
Micron Technology 18ASF2G72PDZ-2G3B1 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Crucial Technology BL8G30C15U4B.M8FE 8GB
SK Hynix HYMP112U64CP8-S5 1GB
Kingston KHX2666C16S4/16G 16GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
G Skill Intl F4-2800C15-16GRKD 16GB
A-DATA Technology DDR3 1333G 2GB
Crucial Technology BLS8G4D240FSCK.8FD 8GB
AMD AE34G1601U1 4GB
G Skill Intl F4-4000C17-16GTRSB 16GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Corsair CM4X16GE2133C15S2 16GB
Crucial Technology CT25664AA800.M16FM 2GB
Kingston KYXC0V-MIB 16GB
Report a bug
×
Bug description
Source link