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STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Samsung M378A1K43EB2-CWE 8GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB vs Samsung M378A1K43EB2-CWE 8GB

Overall score
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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Overall score
star star star star star
Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

Differences Specifications Comments

Differences

STEC (Silicon Tech) S1024R3NN2QK-I 1GB Reasons to consider
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Report a bug
  • Faster reading speed, GB/s
    3 left arrow 17.6
    Average value in the tests
Samsung M378A1K43EB2-CWE 8GB Reasons to consider
Samsung M378A1K43EB2-CWE 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    33 left arrow 63
    Around -91% lower latency
  • Faster write speed, GB/s
    12.0 left arrow 1,447.3
    Average value in the tests
  • Higher memory bandwidth, mbps
    25600 left arrow 5300
    Around 4.83 higher bandwidth

Specifications

Complete list of technical specifications
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Samsung M378A1K43EB2-CWE 8GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    63 left arrow 33
  • Read speed, GB/s
    3,231.0 left arrow 17.6
  • Write speed, GB/s
    1,447.3 left arrow 12.0
  • Memory bandwidth, mbps
    5300 left arrow 25600
Other
  • Description
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • Timings / Clock speed
    5-5-5-15 / 667 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • Ranking PassMark (The more the better)
    478 left arrow 2910

STEC (Silicon Tech) S1024R3NN2QK-I 1GB RAM comparisons

Apacer Technology 78.01GA0.AF5 1GB
Team Group Inc. Xtreem-D2-667 1GB

Samsung M378A1K43EB2-CWE 8GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMSX32GX4M2A3200C22 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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