RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB
Compare
STEC (Silicon Tech) S1024R3NN2QK-I 1GB vs Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB
Overall score
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Overall score
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Report a bug
Faster reading speed, GB/s
3
12.5
Average value in the tests
Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB
Report a bug
Below the latency in the PassMark tests, ns
31
63
Around -103% lower latency
Faster write speed, GB/s
9.4
1,447.3
Average value in the tests
Higher memory bandwidth, mbps
19200
5300
Around 3.62 higher bandwidth
Specifications
Complete list of technical specifications
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
63
31
Read speed, GB/s
3,231.0
12.5
Write speed, GB/s
1,447.3
9.4
Memory bandwidth, mbps
5300
19200
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
478
2361
STEC (Silicon Tech) S1024R3NN2QK-I 1GB RAM comparisons
Apacer Technology 78.01GA0.AF5 1GB
Team Group Inc. Xtreem-D2-667 1GB
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology DOVF1B163G2G 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4G
A-DATA Technology AM2U16BC4P2-B05B 4GB
Crucial Technology CT4G4DFS8213.C8FBD1 4GB
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F4-3600C17-16GTZ 16GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Corsair CMK16GX4M4C3000C16 4GB
Samsung M471B1G73DB0-YK0 8GB
Corsair CMK8GX4M2B4000C19 4GB
Kingston 9905403-444.A00LF 4GB
Micron Technology 16ATF2G64AZ-3G2J1 16GB
Corsair CMY8GX3M2A2666C10 4GB
Patriot Memory (PDP Systems) 2133 C14 Series 8GB
Crucial Technology CT51264BF160B.M16F 4GB
UMAX Technology 16GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Samsung M471A1G43EB1-CRC 8GB
G Skill Intl F3-2133C9-4GAB 4GB
Crucial Technology CT16G4SFRA266.M8FB 16GB
G Skill Intl F4-4000C14-16GTZR 16GB
Kingston KHX3466C16D4/16GX 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905713-035.A00G 8GB
Crucial Technology CT25664BA160B.C16F 2GB
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB
Kingston KHX318C10FR/8G 8GB
Corsair CMK16GX4M2K4500C19 8GB
Report a bug
×
Bug description
Source link