RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
takeMS International AG TMS2GB264D083805EV 2GB
G Skill Intl F4-3200C15-8GTZKW 8GB
Compare
takeMS International AG TMS2GB264D083805EV 2GB vs G Skill Intl F4-3200C15-8GTZKW 8GB
Overall score
takeMS International AG TMS2GB264D083805EV 2GB
Overall score
G Skill Intl F4-3200C15-8GTZKW 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
takeMS International AG TMS2GB264D083805EV 2GB
Report a bug
Faster reading speed, GB/s
3
19.9
Average value in the tests
Reasons to consider
G Skill Intl F4-3200C15-8GTZKW 8GB
Report a bug
Below the latency in the PassMark tests, ns
18
50
Around -178% lower latency
Faster write speed, GB/s
15.3
1,457.4
Average value in the tests
Higher memory bandwidth, mbps
17000
6400
Around 2.66 higher bandwidth
Specifications
Complete list of technical specifications
takeMS International AG TMS2GB264D083805EV 2GB
G Skill Intl F4-3200C15-8GTZKW 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
50
18
Read speed, GB/s
3,757.3
19.9
Write speed, GB/s
1,457.4
15.3
Memory bandwidth, mbps
6400
17000
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
557
3421
takeMS International AG TMS2GB264D083805EV 2GB RAM comparisons
Kingston 99P5316-014.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-3200C15-8GTZKW 8GB RAM comparisons
TwinMOS 8DPT5MK8-TATP 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Corsair CMK16GX4M2C3600C20 8GB
takeMS International AG TMS2GB264D083805EV 2GB
G Skill Intl F4-3200C15-8GTZKW 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Micron Technology 16ATF4G64HZ-3G2B2 32GB
AMD AE34G2139U2 4GB
G Skill Intl F4-3200C14-32GVK 32GB
Samsung M471B5673FH0-CF8 2GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
Samsung M393B5270CH0-CH9 4GB
Samsung M393B5170FH0-CH9 4GB
Samsung M3 78T2953EZ3-CF7 1GB
G Skill Intl F4-2400C15-8GRK 8GB
SK Hynix HMT325S6CFR8C-PB 2GB
G Skill Intl F4-4000C16-16GVK 16GB
Kingston 9965525-018.A00LF 4GB
Crucial Technology CT4G4SFS8213.C8FADP 4GB
Kingston 9965433-034.A00LF 4GB
I’M Intelligent Memory Ltd. PF4OUN-2400CH0-08G-A 8GB
A-DATA Technology VDQVE1B16 2GB
Kingston 9905622-057.A00G 4GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Crucial Technology CT8G4SFS8213.M8FB 8GB
Samsung M471A1K43BB1-CRC 8GB
Samsung M471A2K43BB1-CRC 16GB
Kingston K531R8-MIN 4GB
G Skill Intl F4-3600C18-32GTRG 32GB
Report a bug
×
Bug description
Source link