RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
takeMS International AG TMS2GB264D083805EV 2GB
G Skill Intl F4-4800C19-8GTESC 8GB
Compare
takeMS International AG TMS2GB264D083805EV 2GB vs G Skill Intl F4-4800C19-8GTESC 8GB
Overall score
takeMS International AG TMS2GB264D083805EV 2GB
Overall score
G Skill Intl F4-4800C19-8GTESC 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
takeMS International AG TMS2GB264D083805EV 2GB
Report a bug
Faster reading speed, GB/s
3
17.4
Average value in the tests
Reasons to consider
G Skill Intl F4-4800C19-8GTESC 8GB
Report a bug
Below the latency in the PassMark tests, ns
25
50
Around -100% lower latency
Faster write speed, GB/s
18.3
1,457.4
Average value in the tests
Higher memory bandwidth, mbps
17000
6400
Around 2.66 higher bandwidth
Specifications
Complete list of technical specifications
takeMS International AG TMS2GB264D083805EV 2GB
G Skill Intl F4-4800C19-8GTESC 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
50
25
Read speed, GB/s
3,757.3
17.4
Write speed, GB/s
1,457.4
18.3
Memory bandwidth, mbps
6400
17000
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
557
3731
takeMS International AG TMS2GB264D083805EV 2GB RAM comparisons
Kingston 99P5316-014.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-4800C19-8GTESC 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393B2G70BH0-CK0 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
takeMS International AG TMS2GB264D083805EV 2GB
G Skill Intl F4-4800C19-8GTESC 8GB
A-DATA Technology DDR3 1866 2OZ 4GB
Apacer Technology 78.CAGP7.DFW0C 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Crucial Technology CT8G4DFS824A.C8FJ 8GB
Samsung M378B5273DH0-CH9 4GB
Wilk Elektronik S.A. GR2666S464L19S/8G 8GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Patriot Memory (PDP Systems) 4000 C19 Series 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
DSL Memory D4SH1G081SH26A-C 8GB
A-DATA Technology AM1U16BC4P2-B19H 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
A-DATA Technology DDR3 1600 4GB
Corsair CMK16GX4M4B3000C15 4GB
Crucial Technology CT16G4DFD8266.M16FJ 16GB
G Skill Intl F4-3733C17-16GTZR 16GB
G Skill Intl F3-2800C12-8GTXDG 8GB
Avexir Technologies Corporation DDR4-2133 CL15 8GB 8GB
takeMS International AG TMS2GB264D082-805G 2GB
Kingston 9905713-001.A00G 4GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
InnoDisk Corporation M4U0-8GSSKCSJ 8GB
ASint Technology SSA302G08-EGN1C 4GB
G Skill Intl F4-4000C16-16GTRSA 16GB
SK Hynix HMT451U7BFR8C-RD 4GB
G Skill Intl F4-2400C17-16GIS 16GB
Report a bug
×
Bug description
Source link