RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
TwinMOS 8DHE3MN8-HATP 2GB
Samsung M471A4G43BB1-CWE 32GB
Compare
TwinMOS 8DHE3MN8-HATP 2GB vs Samsung M471A4G43BB1-CWE 32GB
Overall score
TwinMOS 8DHE3MN8-HATP 2GB
Overall score
Samsung M471A4G43BB1-CWE 32GB
Differences
Specifications
Comments
Differences
Reasons to consider
TwinMOS 8DHE3MN8-HATP 2GB
Report a bug
Faster reading speed, GB/s
3
15
Average value in the tests
Faster write speed, GB/s
870.4
14.3
Average value in the tests
Reasons to consider
Samsung M471A4G43BB1-CWE 32GB
Report a bug
Below the latency in the PassMark tests, ns
70
87
Around -24% lower latency
Higher memory bandwidth, mbps
25600
5300
Around 4.83 higher bandwidth
Specifications
Complete list of technical specifications
TwinMOS 8DHE3MN8-HATP 2GB
Samsung M471A4G43BB1-CWE 32GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
87
70
Read speed, GB/s
3,155.6
15.0
Write speed, GB/s
870.4
14.3
Memory bandwidth, mbps
5300
25600
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
Timings / Clock speed
5-5-5-15 / 667 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
417
2519
TwinMOS 8DHE3MN8-HATP 2GB RAM comparisons
takeMS International AG TMS1GB264D083805EV 1GB
Ramaxel Technology RML1520AG38D6F-667 512MB
Samsung M471A4G43BB1-CWE 32GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
SK Hynix HYMP112U64CP8-S5 1GB
G Skill Intl F4-3466C16-16GTZR 16GB
Kingston 9905403-090.A01LF 4GB
Crucial Technology BL8G32C16U4BL.M8FE 8GB
AMD R5316G1609U2K 8GB
Crucial Technology CT16G4SFRA266.M16FRS 16GB
A-DATA Technology DQKD1A08 1GB
Kingston 9905700-013.A00G 8GB
Kingston 99U5429-007.A00LF 2GB
Gloway International (HK) STK4U2400D17082C 8GB
PNY Electronics PNY 2GB
Kingston MSI24D4S7D8MB-16 16GB
Samsung M391B5673EH1-CH9 2GB
Kingston KHX2666C15/8G 8GB
Crucial Technology CT16G48C40U5.M8A1 16GB
A-DATA Technology AO1P26KCST2-BWWS 16GB
Crucial Technology CT51264BD1339.M16F 4GB
A-DATA Technology AO1P24HC4N2-BWCS 4GB
SK Hynix HYMP112U64CP8-S5 1GB
Crucial Technology BLT16G4D30AETA.K16FB 16GB
Hexon Technology Pte Ltd HEXON 1GB
Patriot Memory (PDP Systems) 2400 C16 Series 16GB
AMD R5S38G1601U2S 8GB
G Skill Intl F4-2133C15-8GNS 8GB
Micron Technology 18HTF12872AY-800F1 1GB
G Skill Intl F4-3600C16-8GTZNC 8GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Inmos + 256MB
Report a bug
×
Bug description
Source link